The JANTX2N333 is a high-reliability bipolar junction transistor (BJT) designed for switching and amplification in demanding industrial and military applications. Manufactured to meet strict reliability and performance standards, it offers stable operation under elevated temperatures and harsh environmental conditions. This transistor boasts robust electrical characteristics, including a high collector-emitter voltage and substantial collector current capacity, making it suitable for power control and signal amplification tasks. For engineers and sourcing specialists seeking dependable semiconductor components, the JANTX2N333 provides a proven solution with consistent quality and performance. Discover more from the IC Manufacturer.
JANTX2N333-Transistor Technical Specifications
Parameter
Specification
Transistor Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
100 V
Collector-Base Voltage (VCBO)
120 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
8 A
Power Dissipation (PD)
75 W
Gain Bandwidth Product (fT)
4 MHz
Transition Frequency
4 MHz
Package Type
TO-3 Metal Can
Junction Temperature (TJ)
200??C Max
JANTX2N333-Transistor Key Features
High Voltage Handling: Supports up to 120 V collector-base voltage, enabling use in high-voltage circuits with reliable insulation and safety margins.
Robust Collector Current Capacity: Rated for continuous collector currents up to 8 A, suitable for heavy-duty switching and power amplification applications.
Enhanced Thermal Performance: The TO-3 metal can package ensures efficient heat dissipation, enhancing reliability and operational lifespan under high power conditions.
Military-Grade Quality: Manufactured to meet rigorous standards, this transistor offers superior reliability and performance in harsh environments, supporting mission-critical applications.
Typical Applications
High-power amplifier circuits where stable gain and thermal stability are critical, such as in RF transmitters and industrial drivers requiring robust switching performance.
Power control units in industrial automation systems, benefiting from the transistor’s ability to handle substantial current and voltage loads safely.
Military and aerospace electronics demanding components that maintain functionality under extreme temperature and mechanical stress.
Switching regulators and power supply designs needing efficient and reliable transistor switching with low saturation voltage.
JANTX2N333-Transistor Advantages vs Typical Alternatives
This transistor stands out for its combination of high collector-emitter voltage, substantial collector current capability, and rugged TO-3 packaging, providing superior thermal dissipation compared to plastic-encapsulated alternatives. Its military-grade reliability ensures consistent performance in harsh environments, making it preferable for mission-critical applications where sensitivity and power handling are paramount. These factors contribute to improved system reliability and reduced downtime versus standard commercial BJTs.
The JANTX2N333 is a product typically associated with legacy semiconductor manufacturers specializing in high-reliability discrete components. It is manufactured under stringent quality control to meet military standards, often denoted by the ??JAN?? (Joint Army-Navy) prefix indicating compliance with defense-grade specifications. These transistors are widely respected in the industry for their proven durability and performance across decades of use in aerospace, military, and industrial electronics. While originally produced by companies such as Motorola and other leading semiconductor brands, current sourcing is generally through authorized distributors specializing in legacy and high-reliability parts.
FAQ
What is the maximum collector current of this transistor
