JANTXV2N3725UB-Transistor Overview
The JANTXV2N3725UB is a high-performance bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and military-grade applications. Manufactured to meet stringent JAN (Joint Army-Navy) specifications, this transistor ensures enhanced ruggedness and durability under harsh environmental conditions. With robust voltage and current ratings, it supports demanding circuits requiring stable gain and low noise operation. Suitable for power amplification, signal processing, and control systems, the device combines precision engineering with proven semiconductor technology. For procurement or design integration, refer to IC Manufacturer for certified sourcing and datasheet details.
JANTXV2N3725UB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | ?C |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector Current (IC) | 1.5 | A |
| Power Dissipation (PD) | 800 | mW |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40 to 160 | ?C |
| Transition Frequency | 100 | MHz |
| Operating Temperature Range | -55 to +125 | ??C |
JANTXV2N3725UB-Transistor Key Features
- High voltage and current rating: Enables operation in demanding power switching and amplification circuits, ensuring versatility across multiple applications.
- JAN specification compliance: Guarantees military-grade reliability and enhanced ruggedness for critical environments.
- Wide operating temperature range: Supports use in extreme thermal conditions, maintaining stable performance from -55??C to +125??C.
- Consistent current gain: Provides reliable amplification with a DC gain range of 40 to 160, supporting precise signal control.
Typical Applications
- Power amplification stages in communication and radar systems, where stable gain and reliability are essential for signal integrity.
- Switching elements in industrial control circuits requiring robust performance under varying load conditions.
- General-purpose amplification in military and aerospace electronics, benefiting from JAN-certified quality standards.
- Low-noise pre-amplification circuits in measurement and instrumentation devices, leveraging the transistor??s frequency response and gain characteristics.
JANTXV2N3725UB-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its adherence to JAN standards, offering superior environmental resilience and reliability compared to commercial-grade alternatives. Its high gain bandwidth and stable current handling make it ideal for critical amplification and switching applications. The extended temperature range and rugged construction ensure consistent operation in challenging industrial and military settings, providing engineers with a dependable component that reduces failure risks and enhances system longevity.
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JANTXV2N3725UB-Transistor Brand Info
The JANTXV2N3725UB is manufactured under the Joint Army-Navy (JAN) standard, a hallmark of stringent quality and durability required for military and aerospace applications. This certification ensures that each transistor undergoes rigorous testing to meet high-reliability standards including thermal cycling, mechanical shock, and vibration resistance. The JAN designation is often licensed to trusted semiconductor producers who specialize in high-reliability discrete components, ensuring the product is built to exacting military specifications while maintaining consistent electrical performance suitable for demanding industrial applications.
FAQ
What type of transistor is the JANTXV2N3725UB?
The device is an NPN bipolar junction transistor (BJT) designed for switching and amplification purposes. It features a standard three-terminal configuration with collector, base, and emitter connections suitable for various electronic circuits.
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What is the maximum collector current rating for this transistor?
The maximum continuous collector current is specified at 1.5 amperes, enabling it to handle moderate power levels in switching and amplification applications without compromising device integrity.







