JANS2N5796U-Dual-Transistor NPN Silicon, Military Grade, TO-39 Metal Can Package

  • This dual-transistor device enables amplification and switching, improving circuit efficiency and signal control.
  • It operates within specific electrical parameters to ensure stable performance under varying conditions.
  • The compact package design supports efficient board layout and saves valuable circuit space.
  • Ideal for use in signal processing circuits, helping to maintain consistent output quality.
  • Manufactured to meet rigorous quality standards, ensuring long-term reliability in demanding applications.
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JANS2N5796U-Dual-Transistor Overview

The JANS2N5796U-Dual-Transistor is a high-performance, hermetically sealed dual NPN transistor designed for reliable operation in demanding environments. Engineered with military-grade standards, it ensures enhanced durability and thermal stability, making it ideal for aerospace, defense, and industrial applications. This device integrates two transistors in a single package, optimizing board space while maintaining excellent electrical characteristics such as high gain and low noise. Manufactured under stringent quality controls, the JANS2N5796U provides consistent switching performance and linear amplification, supporting critical electronic circuit designs. For trusted supply and technical support, visit IC Manufacturer.

JANS2N5796U-Dual-Transistor Technical Specifications

Parameter Specification
Transistor Type Dual NPN
Collector-Emitter Voltage (VCEO) 80 V
Collector Current (IC) 0.8 A
Power Dissipation (Ptot) 1 W
Gain Bandwidth Product (fT) 100 MHz (typical)
DC Current Gain (hFE) 100 to 300
Package Type Hermetic TO-39 Metal Can
Operating Temperature Range -55??C to +125??C
Noise Figure Low noise, suitable for signal amplification

JANS2N5796U-Dual-Transistor Key Features

  • Dual NPN Configuration: Integrates two matched transistors in one compact package, reducing PCB space and simplifying circuit design.
  • High Voltage and Current Handling: Supports collector-emitter voltages up to 80 V and collector currents of 0.8 A, enabling robust switching and amplification under heavy loads.
  • Hermetic Metal Can Package: Provides superior environmental protection against moisture, dust, and mechanical stress, ensuring long-term reliability in harsh conditions.
  • Wide Operating Temperature Range: Functional from -55??C to +125??C, suitable for industrial and military-grade temperature requirements.

Typical Applications

  • Military and aerospace electronics requiring highly reliable dual transistor devices with excellent gain stability and hermetic sealing for extreme environments.
  • Signal amplification circuits where low noise and matched transistor pairs improve fidelity and reduce distortion.
  • General-purpose switching applications in industrial control systems, benefiting from high voltage and current capacity.
  • Analog circuit designs necessitating compact dual transistor solutions for space-constrained printed circuit boards.

JANS2N5796U-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers distinct advantages over typical single-transistor components by providing matched pairs within a hermetic package, enhancing both sensitivity and accuracy in signal processing. Its robust voltage and current ratings combined with a wide temperature range ensure reliable operation under demanding industrial and military conditions. The metal can construction also improves long-term reliability compared to plastic-encapsulated alternatives, making it a superior choice for precision and durability.

JANS2N5796U-Dual-Transistor Brand Info

The JANS2N5796U is a military specification transistor originally standardized under the JEDEC JANS series, designed to meet rigorous defense and aerospace industry standards. Typically manufactured by certified suppliers specializing in high-reliability semiconductor devices, this dual transistor adheres to stringent screening and burn-in processes to guarantee performance under harsh environmental stresses. Known for its consistency and durability, the device is widely recognized among engineers and sourcing specialists for use in mission-critical applications where failure is not an option.

FAQ

What are the electrical characteristics that define the JANS2N5796U dual transistor performance?

The device features a collector-emitter voltage rating of 80 V and supports collector currents up to 0.8 A. It offers a DC current gain (hFE) range between 100 and 300, with a gain bandwidth product typically around 100 MHz, enabling effective switching and amplification in various circuits.

How does the hermetic TO-39 package benefit the device??s reliability?

The hermetic metal can packaging provides a sealed environment that protects the transistor elements from moisture, dust, and mechanical shock. This shielding enhances long

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