JANTXV2N5661P-Transistor-PIND Overview
The JANTXV2N5661P transistor is a precision PNP bipolar junction transistor (BJT) designed for high-reliability applications. Engineered to meet stringent military standards, this device offers robust electrical performance with stable gain and low noise characteristics. It is ideal for use in amplification, switching, and signal processing circuits where dependable operation under varying environmental conditions is critical. With its hermetically sealed metal can package, the transistor ensures long-term durability and resistance to moisture and contaminants, making it suitable for aerospace, defense, and industrial electronics. For detailed sourcing and specifications, visit IC Manufacturer.
JANTXV2N5661P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | -40 V |
| Collector-Base Voltage (VCBO) | -60 V |
| Emitter-Base Voltage (VEBO) | -5 V |
| Collector Current (IC) | -150 mA (max) |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 40 to 120 |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range | -55??C to +125??C |
| Package | Hermetically Sealed Metal Can (TO-18) |
JANTXV2N5661P-Transistor-PIND Key Features
- Military-Grade Reliability: Qualified to JAN and JANTXV standards, ensuring robust performance in demanding environments.
- Wide Operating Temperature: Supports operation from -55??C to +125??C, enabling use in aerospace and defense electronics.
- High Gain and Frequency Response: Offers DC current gain between 40 and 120 with a transition frequency around 100 MHz, suitable for amplification and switching circuits.
- Hermetic Metal Can Package: Provides superior protection against moisture and contaminants, enhancing device longevity.
Typical Applications
- Signal amplification in high-reliability avionics and aerospace communication systems requiring stable gain and low noise.
- Switching components in industrial control circuits operating under harsh environmental conditions.
- Military-grade electronic equipment where performance consistency and ruggedness are critical.
- Precision analog circuits demanding low leakage currents and stable transistor parameters over temperature.
JANTXV2N5661P-Transistor-PIND Advantages vs Typical Alternatives
This transistor excels in offering a combination of high gain, frequency response, and military-grade reliability compared to typical commercial alternatives. Its hermetically sealed metal can package ensures enhanced protection against environmental stressors, leading to greater longevity and consistent performance. The wide operating temperature range and strict JAN/JANTXV qualification make it ideal for demanding aerospace and defense applications where typical transistors may fail or degrade.
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JANTXV2N5661P-Transistor-PIND Brand Info
The JANTXV2N5661P transistor is manufactured under the JAN (Joint Army-Navy) and JANTXV qualification standards, which are certifications for high-reliability semiconductor components used primarily in military and aerospace sectors. These standards guarantee strict testing and quality controls, including temperature cycling, burn-in, and hermetic sealing. The JANTXV designation indicates extended screening beyond standard JAN requirements, ensuring superior performance and reliability. This device is produced by established semiconductor manufacturers specializing in defense-grade components, ensuring compliance with MIL-PRF-19500 specifications.
FAQ
What does the JANTXV designation mean for this transistor?
JANTXV is an extended screening classification under the Joint Army-Navy (JAN) standards. It means the transistor undergoes additional rigorous testing beyond basic JAN requirements, such as temperature cycling, burn-in, and hermetic sealing. This ensures higher reliability and suitability for mission-critical military and aerospace applications.
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