JANTXV2N5661-Transistor Overview
The JANTXV2N5661 is a high-performance bipolar junction transistor designed for military and aerospace applications, providing superior reliability and stability under harsh environmental conditions. This silicon NPN transistor features a high voltage rating and robust current handling capabilities, making it ideal for switching and amplification tasks in demanding circuits. Manufactured to stringent JAN (Joint Army-Navy) standards, it ensures consistent performance in temperature extremes and high-vibration scenarios. Engineers and sourcing specialists can rely on this transistor for critical applications requiring durable, precision semiconductor components. For more detailed information, visit IC Manufacturer.
JANTXV2N5661-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 10 A (peak) |
| Power Dissipation (PD) | 1.5 W |
| DC Current Gain (hFE) | 60 to 240 (varies by test conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range | -55??C to +200??C |
JANTXV2N5661-Transistor Key Features
- High voltage capability: Supports up to 80 V collector-emitter voltage, enabling use in high-voltage switching applications.
- Robust current handling: Can safely manage peak collector currents up to 10 A for reliable performance under transient loads.
- Wide temperature tolerance: Operates effectively from -55??C to +200??C, suitable for extreme environmental conditions.
- Military-grade reliability: Manufactured to JAN standards, ensuring consistent quality and enhanced durability for aerospace and defense uses.
- High-frequency response: Typical transition frequency of 100 MHz supports fast switching and amplification in RF circuits.
Typical Applications
- Military and aerospace electronics requiring rugged, high-voltage NPN transistors capable of operating across extended temperature ranges.
- Power switching circuits where high peak current and voltage ratings are essential for transient load management.
- RF amplification stages benefiting from the transistor??s high transition frequency and stable gain characteristics.
- Industrial control systems demanding reliable, long-life semiconductor components that withstand mechanical and thermal stress.
JANTXV2N5661-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling combined with military-grade certification, making it more reliable than standard commercial transistors in harsh environments. Its broad operating temperature range and robust construction deliver enhanced durability and performance consistency where sensitive, high-precision operation is critical. Such advantages ensure longer service life and reduced failure rates compared to typical alternatives in aerospace and defense applications.
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JANTXV2N5661-Transistor Brand Info
The JANTXV2N5661 transistor is produced under strict military standards by trusted manufacturers specializing in high-reliability semiconductors. It aligns with the Joint Army-Navy (JAN) quality assurance program, a hallmark of rugged electronic components designed for defense and aerospace sectors. This product is known for its stringent screening processes, traceability, and compliance with MIL-PRF-19500 specifications, offering engineers a dependable solution for mission-critical designs.
FAQ
What type of transistor is the JANTXV2N5661?
The device is an NPN bipolar junction transistor (BJT) designed for high-voltage, high-current applications typically found in military and aerospace environments. It offers stable performance in switching and amplification roles.
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