JAN2N6213-Transistor | High-Power PNP Transistor | TO-3 Package by ON Semiconductor

JAN2N6213-Transistor Overview

The JAN2N6213 is a high-voltage NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial and military-grade applications. Featuring a collector-emitter voltage rating of up to 350V and a collector current capacity of 1.5A, this transistor offers reliable performance under demanding electrical conditions. Its construction ensures low saturation voltage and stable gain, supporting efficient power management and signal control. The device is suitable for use in linear amplifiers, switching regulators, and other high-voltage circuits where durability and precision are critical. For procurement and detailed technical support, visit IC Manufacturer.

JAN2N6213-Transistor Technical Specifications

JAN2N6213-Transistor Key Features

• High Voltage Tolerance: With a collector-emitter voltage of 350V, the transistor excels in high-voltage switching applications, enabling safe operation in demanding circuits.
• Moderate Current Handling: Supports collector current up to 1.5A, allowing it to drive moderate loads efficiently without excessive heat generation.
• Wide Operating Temperature Range: Rated for junction temperatures from -65??C to +200??C, it ensures reliability in harsh environments and military-grade applications.
• Stable Gain Characteristics: Offers a DC current gain ranging from 20 to 70, providing consistent amplification performance critical for analog signal processing.

Typical Applications

• High-voltage switching circuits in industrial power supplies, where robust voltage handling and reliable switching are essential for system stability.
• Linear amplifier stages in audio and RF applications requiring precise control and moderate gain.
• Military and aerospace electronics that demand components rated for extended temperature ranges and high reliability.
• General-purpose amplification and switching in control circuits, benefiting from its balance of voltage, current, and power ratings.

JAN2N6213-Transistor Advantages vs Typical Alternatives

This transistor delivers superior voltage handling and operates reliably across a broad temperature range, distinguishing it from typical low-voltage alternatives. Its combined high collector-emitter voltage and moderate current capability make it ideal for applications requiring both power and precision. The robustness in harsh environments and consistent gain performance enhances system reliability, while the device??s standardized package facilitates integration into existing industrial and military designs.

JAN2N6213-Transistor Brand Info

The JAN2N6213 transistor is part of the JAN (Joint Army-Navy) series, recognized for its military-grade quality and stringent manufacturing standards. Originally produced under military specification MIL-PRF-19500, these transistors are known for their proven reliability in defense and aerospace applications. The JAN2N6213 is commonly sourced from established semiconductor manufacturers who comply with these rigorous standards, ensuring extended operating life and performance stability in critical systems.

FAQ

What is the maximum collector current rating for the JAN2N6213 transistor?

The maximum collector current rating for this device is 1.5 amperes, allowing it to handle moderate load currents safely in switching and amplification circuits without risk of damage.

Can the JAN2N6213 transistor be used in high-temperature environments?

Yes, it is rated to operate at junction temperatures ranging from -65??C up to