JAN2N6211P-Transistor-PIND NPN Power Transistor in PIND Package by Motorola

JAN2N6211P-Transistor-PIND Overview

The JAN2N6211P-Transistor-PIND is a high-performance phototransistor designed specifically for use in PIN diode detector circuits. It offers reliable switching characteristics with a focus on high sensitivity to infrared light, making it ideal for industrial and defense sensor applications. Engineered for durability and precision, this transistor supports stable operation over a wide temperature range and ensures consistent signal amplification. Its robust construction and specified parameters make it well-suited for optical detection and signal processing tasks. For more detailed technical data and sourcing, visit IC Manufacturer.

JAN2N6211P-Transistor-PIND Technical Specifications

JAN2N6211P-Transistor-PIND Key Features

• High sensitivity to infrared light: Ensures accurate detection and amplification of weak optical signals in PIN diode circuits.
• Wide operating temperature range: Supports reliable function in harsh industrial and defense environments without performance degradation.
• Hermetically sealed TO-18 package: Provides excellent environmental protection and long-term reliability under mechanical stress or moisture exposure.
• Fast switching response: Enables efficient signal processing in high-frequency applications, improving system responsiveness.

Typical Applications

• Optical sensor circuits utilizing PIN photodiodes for light detection and signal conversion in industrial automation systems.
• Infrared receiver modules in remote control and communication devices requiring precise phototransistor performance.
• Military and aerospace photodetection systems demanding robust, temperature-tolerant components for signal amplification.
• Instrumentation and measurement equipment where stable, high-gain phototransistors improve sensor accuracy and reliability.

JAN2N6211P-Transistor-PIND Advantages vs Typical Alternatives

This phototransistor offers superior sensitivity and fast switching speeds compared to typical alternatives, enabling higher accuracy in optical detection. Its hermetically sealed TO-18 package enhances reliability under extreme temperatures and environmental conditions. The device??s optimized gain and power dissipation characteristics reduce signal noise and improve overall system efficiency, making it a preferred choice for critical industrial and defense applications.

JAN2N6211P-Transistor-PIND Brand Info

The JAN2N6211P is a military-grade transistor originally produced to meet stringent quality and reliability standards for aerospace and defense applications. It is manufactured under government-approved processes to ensure ruggedness and consistent performance. This transistor is part of a family of hermetically sealed phototransistors designed for precise optical sensing and signal amplification, widely recognized for durability and stable operation across harsh environments. Its legacy continues through trusted semiconductor manufacturers specializing in high-reliability components.

FAQ

What is the primary function of the JAN2N6211P phototransistor in sensor circuits?

The primary function is to amplify light signals detected by a PIN diode, converting them into electrical signals with high sensitivity and fast response. This makes it integral in optical sensing and communication systems requiring precise signal detection.

How does the hermetically sealed TO-18 package benefit the transistor??s performance?

The hermetic sealing protects the device from moisture, dust, and mechanical stress, significantly enhancing its reliability and lifespan, especially in harsh industrial or military environments where environmental control is limited.

What temperature range can the JAN2N6211P operate within effectively?

This transistor is rated for operation from -55??C up to +125??C, allowing it to perform reliably in extreme temperature conditions typical in aerospace, defense, and industrial applications.