JAN2N6211-Transistor NPN Power Transistor in TO-3 Package ?C Motorola Semiconductor

JAN2N6211-Transistor Overview

The JAN2N6211 transistor is a high-performance bipolar junction transistor (BJT) designed for medium power switching and amplification in industrial and military applications. Featuring robust voltage and current handling capabilities, this device ensures reliable operation under demanding conditions, including elevated temperatures and high collector voltages. Its complementary electrical characteristics make it suitable for use in power regulation, signal amplification, and general-purpose switching circuits. Manufactured to stringent military standards, the JAN2N6211 delivers consistent performance and long-term reliability, making it a preferred choice for engineers requiring durable transistor solutions. For detailed procurement and technical resources, visit IC Manufacturer.

JAN2N6211-Transistor Technical Specifications

JAN2N6211-Transistor Key Features

• High voltage tolerance: With a collector-emitter voltage rating of 160 V, it supports robust operation in circuits with high voltage demands, enhancing design flexibility.
• High collector current capability: Supports continuous currents up to 5 A, allowing for efficient power switching and amplification in medium power applications.
• Wide operating temperature range: Rated for junction temperatures up to 200??C, ensuring reliable performance in harsh environments and industrial conditions.
• TO-3 package: Provides excellent thermal dissipation and mechanical durability, increasing device longevity and reliability.

Typical Applications

• Power switching in industrial control systems, where reliable medium power transistors are essential for efficient load control and signal modulation.
• Audio amplifier stages in professional and military-grade equipment, benefiting from the transistor??s high gain and linearity.
• Voltage regulation circuits requiring stable operation under variable load and temperature conditions.
• General-purpose amplification and switching tasks in automotive and aerospace electronics, where durability and consistent performance are critical.

JAN2N6211-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many general-purpose BJTs, providing enhanced reliability and robustness in demanding applications. Its high power dissipation capability and TO-3 package contribute to effective thermal management, reducing failure risks. The wide operating temperature range ensures consistent performance where alternatives may degrade, making it ideal for industrial and military environments requiring durable, high-reliability components.

JAN2N6211-Transistor Brand Info

The JAN2N6211 is traditionally associated with military-grade semiconductor offerings, conforming to Joint Army-Navy (JAN) standards for ruggedness and reliability. Originating from established manufacturers specializing in high-reliability discrete components, this transistor is produced under strict quality and screening controls to meet defense and aerospace specifications. Its TO-3 metal can package and electrical characteristics reflect the legacy of robust design principles favored in critical electronic systems. These features position the transistor as a trusted component in legacy systems and ongoing industrial applications requiring MIL-spec compliance.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 5 amperes, allowing the device to handle medium power loads effectively in switching and amplification roles.

Which package type does this transistor use, and why is it important?

This transistor comes in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical strength, enhancing heat dissipation and device longevity in demanding applications.

What voltage levels can the transistor safely operate under?

It supports a collector-emitter voltage (VCEO) of up to 160 volts, making it suitable for circuits requiring high voltage tolerance without compromising reliability.