JAN2N3724UB-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package by ON Semiconductor

JAN2N3724UB-Transistor Overview

The JAN2N3724UB is a high-performance bipolar junction transistor designed for industrial and military-grade applications requiring robust switching and amplification capabilities. Featuring a maximum collector-emitter voltage of 60 V and a collector current rating up to 1.5 A, this transistor ensures reliable operation under demanding conditions. Its complementary NPN configuration supports efficient power management and signal processing tasks. The device??s construction adheres to stringent military standards, providing enhanced durability and consistent performance across temperature variations. Sourcing specialists and engineers benefit from its proven track record in precision electronics. For more detailed information, visit IC Manufacturer.

JAN2N3724UB-Transistor Technical Specifications

JAN2N3724UB-Transistor Key Features

• High voltage capability: With a collector-emitter voltage rating of 60 V, it supports robust switching and amplification in higher voltage circuits without breakdown risk.
• Moderate current handling: Supports collector currents up to 1.5 A, making it suitable for medium power applications requiring reliable current control.
• Military-grade construction: Complies with JAN standards for enhanced durability and performance consistency under harsh environmental conditions.
• High-frequency operation: Transition frequency around 100 MHz enables effective use in RF amplification and high-speed switching circuits.
• Compact TO-18 package: Facilitates easy integration in space-constrained designs while providing superior thermal dissipation.
• Wide operating temperature range: Reliable performance from -55??C to +125??C suits demanding industrial and aerospace environments.

Typical Applications

• Power amplification in analog circuits, especially where moderate voltage and current handling with low noise is critical for signal integrity.
• Switching elements in industrial control systems requiring reliable operation over wide temperature ranges and varying load conditions.
• RF amplification stages in communication devices, leveraging its high transition frequency for improved signal processing.
• Military and aerospace electronics where rugged reliability and compliance with strict quality standards are mandatory.

JAN2N3724UB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage and current ratings optimized for medium power applications, outperforming typical general-purpose transistors in reliability and frequency response. Its military-grade certification ensures enhanced ruggedness and consistent gain across wide temperature spans, providing superior operational stability compared to commercial-grade components. The compact TO-18 package improves thermal management and facilitates integration into critical systems, making it a preferred choice where durability and precision matter.

JAN2N3724UB-Transistor Brand Info

The JAN2N3724UB is manufactured under the Joint Army-Navy (JAN) quality standards, indicating compliance with stringent military and aerospace requirements. This ensures the transistor meets rigorous performance, reliability, and environmental criteria. Typically produced by established semiconductor manufacturers specializing in military-grade components, this transistor is a trusted element in high-reliability electronic designs. Its JAN designation confirms traceability, quality control, and extended lifecycle support, making it an essential component in defense and industrial electronics applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current is rated at 1.5 amper