JAN2N3725UB-Transistor NPN Bipolar Junction Transistor in TO-39 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • It offers a specific voltage rating that ensures safe operation under typical electrical conditions.
  • The compact package reduces board space, facilitating design in tight or portable electronic devices.
  • Ideal for use in power regulation modules, enhancing stability and performance in electronic systems.
  • Manufactured to meet industry standards, providing consistent reliability over extended operating periods.
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JAN2N3725UB-Transistor Overview

The JAN2N3725UB is a high-performance NPN bipolar junction transistor designed for medium to high power switching and amplification applications. Featuring a robust collector current rating and high voltage tolerance, it offers reliable operation in demanding industrial and military environments. Its complementary electrical characteristics provide efficient gain and switching speed, making it suitable for use in power amplifiers, driver circuits, and general-purpose switching. Engineered to meet stringent military standards, this transistor ensures durability and consistent performance under harsh conditions. For detailed sourcing and support, visit IC Manufacturer.

JAN2N3725UB-Transistor Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction Transistor ??
Collector-Emitter Voltage (VCEO) 100 Volts
Collector-Base Voltage (VCBO) 120 Volts
Emitter-Base Voltage (VEBO) 5 Volts
Collector Current (IC) 10 Amperes
Power Dissipation (Ptot) 40 Watts
DC Current Gain (hFE) 40 to 160 ??
Transition Frequency (fT) 4.0 MHz
Operating Temperature Range -65 to +200 ??C

JAN2N3725UB-Transistor Key Features

  • High Voltage Tolerance: Supports collector-emitter voltages up to 100V, enabling operation in high-voltage circuits without degradation.
  • Robust Collector Current Capacity: Handles continuous collector currents up to 10A, which ensures reliable switching and amplification in power-intensive applications.
  • Wide Operating Temperature Range: Rated for -65??C to +200??C, suitable for harsh environmental and military-grade applications.
  • High Power Dissipation: Capable of dissipating up to 40W, allowing sustained operation under heavy load without thermal failure.
  • Broad Current Gain Range: DC current gain between 40 and 160 enhances flexibility for various circuit requirements.

Typical Applications

  • Power Amplification: Ideal for use in audio and RF power amplifier stages where high current and voltage handling are critical for signal fidelity.
  • Switching Regulators: Suitable for use in DC-DC converters and power management circuits requiring reliable switching performance.
  • Driver Circuits: Provides necessary gain and power handling to drive larger transistors or relay coils in industrial control systems.
  • Military and Aerospace Systems: Designed for rugged environments, this transistor supports critical military-grade electronic assemblies and communication equipment.

JAN2N3725UB-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage and current ratings compared to typical small-signal transistors, making it advantageous for high-power industrial applications. Its broad operating temperature range and high power dissipation capabilities ensure reliability and longevity under stress. The variable gain range provides design flexibility, while the military-grade construction guarantees operation in extreme conditions, setting it apart from standard commercial alternatives.

JAN2N3725UB-Transistor Brand Info

The JAN prefix denotes Joint Army-Navy qualification, indicating this transistor meets rigorous military standards for reliability and performance. Manufactured by recognized semiconductor producers specializing in defense and aerospace components, this device is built to meet or exceed MIL-STD-750 test methods. Its design and quality assurance ensure suitability for mission-critical electronic systems requiring high durability and consistent electrical characteristics over a wide

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