JANTX2N3765L-Transistor Overview
The JANTX2N3765L-Transistor is a high-performance, silicon NPN bipolar junction transistor designed for military and aerospace applications requiring exceptional reliability and robustness. Classified as a JAN (Joint Army-Navy) device, this transistor offers a collector-base voltage of up to 100V and a collector current rating of 10A, making it suitable for high-power switching and amplification tasks. Its hermetically sealed TO-3 metal package ensures enhanced thermal management and durability under harsh environmental conditions. Engineers and sourcing specialists can rely on this transistor for consistent operation in demanding industrial, automotive, and defense systems. For detailed sourcing and technical support, visit IC Manufacturer.
JANTX2N3765L-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 10 | A |
| Power Dissipation (PD) | 115 | W |
| DC Current Gain (hFE) | 20 to 70 | |
| Transition Frequency (fT) | 5 | MHz |
| Package Type | Hermetically Sealed TO-3 Metal |
JANTX2N3765L-Transistor Key Features
- High Voltage Capability: With a collector-base voltage rating of 100V, it supports high-voltage switching applications safely and reliably.
- High Collector Current: Rated for up to 10A, this transistor can handle substantial load currents, essential for power amplification and driving heavy loads.
- Hermetic TO-3 Package: Provides excellent thermal conductivity and environmental protection, ensuring stable performance in harsh or military-grade environments.
- Wide DC Current Gain Range: The gain between 20 to 70 allows flexibility in circuit design for amplification without compromising linearity.
Typical Applications
- Power amplification stages in military communication equipment, where high voltage and current handling are critical for signal integrity and system reliability.
- Switching regulator circuits requiring robust transistors capable of managing high currents and voltages efficiently.
- Industrial motor control systems that demand reliable, high-power transistors for switching and amplification under varying load conditions.
- Aerospace electronic systems where ruggedness, hermetic sealing, and consistent performance under extreme conditions are mandatory.
JANTX2N3765L-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and voltage ratings compared to many standard NPN BJTs, making it ideal for high-current, high-voltage industrial and military applications. Its hermetically sealed TO-3 package ensures enhanced reliability and thermal management, outperforming plastic-encapsulated alternatives in harsh environments. The broad gain range allows engineers to optimize circuit performance without sacrificing stability, contributing to higher accuracy and efficiency in demanding designs.
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JANTX2N3765L-Transistor Brand Info
The JANTX2N3765L-Transistor is a military-specification device originally specified under the Joint Army-Navy (JAN) standards, which ensure ruggedness, long-term reliability, and consistent performance in defense and aerospace sectors. Typically manufactured by established semiconductor companies specializing in military-grade components, this transistor meets stringent quality and testing protocols. Its design and construction follow industry standards for hermetically sealed power transistors, making it a trusted choice for engineers requiring dependable components in critical, mission-sensitive applications.
FAQ
What type of transistor is the JANTX2N3765L?
The device is an NPN bipolar junction transistor designed for high-power and high-voltage
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