JANS2N5796A-Dual-Transistor Overview
The JANS2N5796A is a dual NPN transistor designed for high-reliability and military-grade applications. It offers robust electrical characteristics such as a high collector-emitter voltage and stable gain, making it suitable for precision amplification and switching tasks. Packaged in a hermetically sealed TO-5 metal can, the device ensures enhanced thermal performance and long-term durability under demanding environmental conditions. This dual transistor integrates two matched NPN transistors in a single package, providing space-saving benefits and simplified circuit design. For detailed sourcing and specifications, visit IC Manufacturer.
JANS2N5796A-Dual-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Dual NPN |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 1 A |
| DC Current Gain (hFE) | 70 min at IC=10 mA |
| Transition Frequency (fT) | 80 MHz min |
| Power Dissipation (PD) | 1.0 W |
| Package Type | Hermetically Sealed TO-5 Metal Can |
JANS2N5796A-Dual-Transistor Key Features
- Dual NPN configuration: Integrates two matched transistors in one package, optimizing board space and reducing component count.
- High voltage ratings: Collector-Emitter voltage up to 60 V ensures compatibility with medium-voltage circuits requiring robust transistor operation.
- Military-grade reliability: Hermetic TO-5 metal can packaging provides superior protection against environmental stress and enhances thermal dissipation.
- Stable gain over temperature: Provides consistent current gain over a wide temperature range, supporting precision amplification needs.
Typical Applications
- High-reliability signal amplification in aerospace and defense systems requiring matched transistor pairs and stable performance under harsh conditions.
- Switching circuits in industrial control systems demanding robust voltage and current handling capabilities.
- Precision analog circuits such as differential amplifiers, thanks to the closely matched transistor characteristics in one package.
- Medical instrumentation electronics where long-term reliability and hermetic sealing are critical for safe operation.
JANS2N5796A-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor offers superior integration by combining two matched NPN devices in a single hermetic package, reducing footprint and assembly complexity. Its higher voltage handling and reliable gain stability outperform many standard discrete transistors, making it ideal for demanding industrial and military applications. The hermetic TO-5 metal can ensures enhanced environmental protection and thermal management, improving device longevity and operational reliability compared to plastic-encapsulated alternatives.
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JANS2N5796A-Dual-Transistor Brand Info
The JANS2N5796A is a military-grade transistor originally produced under the JAN (Joint Army-Navy) specification, ensuring compliance with strict reliability and quality standards for defense and aerospace use. It is manufactured by reputable semiconductor producers specializing in high-reliability components. The device??s construction and testing meet MIL-PRF-19500 standards, making it a trusted choice for engineers requiring guaranteed performance in critical applications.
FAQ
What is the maximum collector current for the JANS2N5796A dual transistor?
The maximum continuous collector current (IC) for each transistor within the device is 1 ampere. This rating ensures it can handle moderate power switching and amplification tasks without exceeding thermal limits.
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How does the hermetic TO-5 metal can package benefit the device??s performance?
The hermetic TO-5 metal can package provides excellent protection against moisture, contaminants, and mechanical stress. It also offers enhanced thermal conductivity, allowing better heat dissipation and improving the transistor??s reliability and







