JAN2N4931-Transistor Overview
The JAN2N4931 is a high-performance silicon NPN bipolar junction transistor designed for switching and amplification in industrial and military-grade applications. This transistor features robust voltage and current ratings, making it suitable for demanding environments requiring reliability and durability. With its complementary PNP counterpart, it supports push-pull amplifier configurations and switching circuits. The JAN2N4931 is manufactured under strict quality controls ensuring consistent electrical parameters, ideal for engineers and sourcing specialists seeking dependable semiconductor components. For detailed sourcing and technical inquiries, visit IC Manufacturer.
JAN2N4931-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector Current (Ic) | 1 A (continuous) |
| Power Dissipation (Ptot) | 1 W (at 25??C) |
| DC Current Gain (hFE) | 40 to 100 (at Ic = 150 mA) |
| Transition Frequency (fT) | 75 MHz (typical) |
| Junction Temperature (Tj) | +200 ??C max |
| Package Type | TO-18 Metal Can |
JAN2N4931-Transistor Key Features
- High voltage capability: Supports collector-emitter voltages up to 100 V, ensuring reliable operation in high-voltage circuits.
- Robust current handling: Rated for continuous collector current of 1 A, enabling efficient switching and amplification in power-sensitive designs.
- Wide operating temperature range: Junction temperature tolerance up to 200??C promotes durability in harsh thermal environments.
- Stable gain characteristics: DC current gain between 40 and 100 at standard test currents provides predictable performance for analog and switching applications.
Typical Applications
- Used in linear and switching amplifier circuits where high voltage and moderate current handling are required, such as audio amplifiers and driver stages.
- Suitable for industrial control circuits that demand reliable transistor switching under varied thermal conditions.
- Commonly applied in power supply regulation circuits to improve stability and efficiency.
- Employed in military and aerospace electronics due to its JAN (Joint Army-Navy) qualification ensuring ruggedness and reliability.
JAN2N4931-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced voltage and current ratings compared to standard small-signal transistors, delivering superior reliability in high-stress environments. Its JAN qualification certifies ruggedness and quality, making it preferable for military and industrial applications where failure is not an option. The TO-18 metal can package ensures excellent thermal dissipation and mechanical stability, providing an edge over plastic-encapsulated alternatives.
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JAN2N4931-Transistor Brand Info
The JAN2N4931 is typically manufactured under the JAN (Joint Army-Navy) standard, indicating it meets stringent military specifications for electronic components. This designation implies enhanced quality assurance, including tighter electrical parameter tolerances and durability testing, compared to commercial-grade transistors. The product is widely available from established semiconductor manufacturers specializing in military and industrial-grade components, ensuring consistent supply and technical support for demanding applications.
FAQ
What does the JAN prefix signify in the transistor??s part number?
The JAN prefix stands for Joint Army-Navy, indicating the transistor meets military specifications for reliability, performance, and environmental durability. These parts undergo rigorous testing and quality control to ensure suitability for defense and aerospace applications.
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What package type does this transistor use, and why is it important?
This transistor uses the TO-18 metal can package, which provides superior thermal conduction and mechanical robustness compared to plastic packages. This packaging improves heat dissipation and enhances device longevity in harsh operating conditions.
Can the transistor be used in high-frequency applications?
With a typical transition frequency of 75 MHz, the transistor is suitable for moderate high-frequency applications







