JAN2N5661U3-Transistor Overview
The JAN2N5661U3 is a high-performance NPN bipolar junction transistor designed for robust switching and amplification in demanding industrial environments. Engineered to meet military and aerospace standards, this transistor offers reliability and consistency under harsh conditions. It features high voltage and current handling capabilities, making it suitable for power regulation and signal processing tasks. Its construction ensures low noise operation and stable gain, critical for precision electronic circuits. The device is available through IC Manufacturer and is widely used by engineers and sourcing specialists requiring dependable semiconductor components for mission-critical applications.
JAN2N5661U3-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 5 A (continuous) |
| DC Current Gain (hFE) | 40 to 160 (varies by test conditions) |
| Power Dissipation (Ptot) | 30 W |
| Transition Frequency (fT) | 30 MHz (typical) |
| Package Type | TO-3 Metal Can |
JAN2N5661U3-Transistor Key Features
- High Voltage and Current Handling: Supports up to 80 V collector-emitter voltage and 5 A continuous collector current, enabling use in power amplification and regulation circuits.
- Wide DC Current Gain Range: Offers hFE between 40 and 160, providing flexibility in circuit gain design and ensuring stable operation across various load conditions.
- Robust Thermal Performance: Power dissipation rating of 30 W with TO-3 packaging allows efficient heat dissipation, increasing operational reliability and longevity.
- Military-Grade Reliability: Built to meet JAN (Joint Army-Navy) standards, ensuring ruggedness and consistent performance in extreme environments.
Typical Applications
- Power amplification stages in industrial control systems where high current capability and voltage tolerance are essential for reliable operation.
- Switching regulators and power supply designs requiring robust transistors to manage load fluctuations and maintain stable output.
- Signal amplification in communication equipment, benefiting from the transistor??s low noise and stable gain characteristics.
- Aerospace and defense systems that demand semiconductor components capable of enduring harsh environmental conditions and high reliability standards.
JAN2N5661U3-Transistor Advantages vs Typical Alternatives
This transistor provides superior voltage and current ratings compared to standard commercial transistors, making it ideal for applications requiring enhanced power handling. Its military-grade JAN certification assures higher reliability and consistency under extreme conditions, outperforming typical alternatives in ruggedness and thermal management. The broad gain range offers design flexibility, while the TO-3 metal package supports efficient heat dissipation, increasing overall device longevity and system stability.
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JAN2N5661U3-Transistor Brand Info
The JAN2N5661U3 transistor is a product aligned with military specification standards widely recognized in the semiconductor industry. Originally developed under the JAN (Joint Army-Navy) series of components, it is manufactured by trusted suppliers specializing in high-reliability discrete semiconductors. This product reflects historical legacy and rigorous quality control, making it a preferred choice for defense contractors and industrial technology firms. Its design heritage ensures compatibility with legacy systems while meeting modern performance requirements.
FAQ
What is the maximum collector current rating of the JAN2N5661U3 transistor?
The maximum continuous collector current rating for this transistor is 5 amperes. This allows the device to handle substantial current loads suitable for power amplification and switching applications in industrial and military electronics.
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What package type does the JAN2N5661U3 use for thermal management?
This transistor is housed in a TO-3 metal can package, which offers excellent thermal conductivity and heat dissipation. This packaging supports high power dissipation up to 30 watts, improving reliability under demanding operational conditions.
Is this transistor suitable for high-frequency applications?
The transition frequency (fT)





