JANTXV2N4931-Transistor Overview
The JANTXV2N4931 transistor is a high-performance NPN silicon bipolar junction transistor designed for rugged, military-grade applications. Featuring a high voltage rating and robust current handling capabilities, this transistor ensures reliable switching and amplification in demanding environments. Its JAN (Joint Army-Navy) certification guarantees compliance with strict military standards, making it ideal for aerospace, defense, and industrial systems requiring durability and long-term stability. The device delivers consistent gain and low noise characteristics, providing engineers and sourcing specialists with a dependable component that meets stringent specifications. For more detailed product information, visit IC Manufacturer.
JANTXV2N4931-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector Current (Ic) | 1.5 A |
| Power Dissipation (Pd) | 20 W |
| Transition Frequency (fT) | 150 MHz |
| Gain Bandwidth Product (hFE) | 40 to 160 (typical) |
| Operating Temperature Range | -65??C to +200??C |
| Package Type | TO-39 Metal Can |
| Noise Figure | Low Noise Performance |
JANTXV2N4931-Transistor Key Features
- High Voltage Endurance: Supports collector-emitter voltages up to 100 V, enabling operation in high-voltage circuits without risk of breakdown.
- Robust Current Handling: Capable of continuous collector currents up to 1.5 A, suitable for power amplification and switching applications requiring high current capacity.
- Extended Temperature Range: Operates reliably from -65??C to +200??C, ideal for harsh environments and military-grade systems demanding temperature resilience.
- JAN Military Specification Compliance: Meets stringent Joint Army-Navy standards, ensuring quality and reliability under extreme mechanical and environmental stress.
Typical Applications
- Military and aerospace power amplification circuits requiring rugged and dependable transistor performance under extreme conditions.
- High-reliability switching devices in defense communication equipment where long-term stability and noise minimization are critical.
- Industrial control systems exposed to wide temperature variations needing durable semiconductor components.
- General-purpose amplification in signal processing applications that demand a combination of high gain and low noise.
JANTXV2N4931-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings combined with a wide operating temperature range, making it more reliable than many commercial equivalents. Its JAN certification ensures enhanced durability and resistance to environmental stress, which translates to longer operational life and reduced failure rates in critical systems. Additionally, the low noise figure improves signal integrity, providing engineers with a robust, high-performance solution suited for demanding industrial and military applications.
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JANTXV2N4931-Transistor Brand Info
The JANTXV2N4931 transistor is manufactured under military standards by reputable semiconductor producers specializing in defense-grade components. The “JAN” prefix denotes compliance with the Joint Army-Navy quality assurance program, indicating stringent testing for performance and reliability. This transistor is part of a legacy product family widely recognized for ruggedness, consistent electrical characteristics, and long-term availability, supporting applications where component failure is not an option. Its production quality aligns with the highest industry standards for military and aerospace electronics.
FAQ
What does the JAN prefix indicate in the transistor part number?
The JAN prefix signifies that the transistor meets Joint Army-Navy military specifications. This means it has undergone rigorous testing for reliability, environmental resistance, and electrical performance, ensuring suitability for military and aerospace applications.
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What are the key electrical ratings of this transistor?
This transistor supports a collector-emitter voltage up to 100 V and a maximum collector current of 1.5 A. It also offers a power dissipation







