JANSM2N3634UB-Transistor NPN Power Amplifier in TO-220 Package by JAN Semiconductor

  • This transistor amplifies electrical signals, enabling effective control in various electronic circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent performance.
  • The compact package design saves board space, facilitating integration into dense electronic assemblies.
  • Ideal for switching applications, it enhances efficiency in power management and signal modulation tasks.
  • Manufactured under strict quality controls, it offers dependable operation over extended usage periods.
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JANSM2N3634UB-Transistor Overview

The JANSM2N3634UB is a high-performance bipolar junction transistor (BJT) designed for power amplification and switching applications. Offering robust current handling capabilities and reliable voltage ratings, this transistor supports efficient operation in demanding industrial and commercial environments. Its complementary NPN structure enables versatile circuit designs, while the rugged packaging ensures durability under thermal and electrical stress. Ideal for engineers and sourcing specialists seeking a dependable transistor for medium to high power applications. For more detailed specifications and sourcing, visit IC Manufacturer.

JANSM2N3634UB-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 160 V
Collector Current (IC) 20 A (max continuous)
Power Dissipation (Ptot) 150 W
Gain Bandwidth Product (fT) 3 MHz (typical)
DC Current Gain (hFE) 20 to 70 (at IC=4 A)
Junction Temperature (Tj) +200 ??C (max)
Package Type TO-3 Metal Can

JANSM2N3634UB-Transistor Key Features

  • High voltage and current ratings: Supports collector-emitter voltages up to 160 V and continuous collector currents up to 20 A, enabling robust power handling in demanding circuits.
  • Wide operating temperature range: Rated for junction temperatures up to 200 ??C, ensuring reliable performance under harsh thermal conditions.
  • Low saturation voltage: Enhances efficiency by reducing power losses during switching, benefiting power amplifier and motor control applications.
  • Durable TO-3 metal can package: Provides excellent thermal dissipation and mechanical protection, improving device longevity and stability.

Typical Applications

  • Power amplifiers in audio and RF systems, where high current and voltage handling are critical for signal fidelity and output power.
  • Switching regulators and power converters requiring reliable high-power transistor operation with stable gain characteristics.
  • Motor control circuits that demand robust switching elements capable of sustaining high currents and thermal stress.
  • Industrial automation and control systems integrating power transistors for precise control and durability in harsh environments.

JANSM2N3634UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling with a maximum collector current of 20 A and high voltage capability of 160 V, outperforming many typical BJTs in similar packages. Its TO-3 metal can design ensures efficient thermal management compared to plastic encapsulated alternatives, leading to enhanced reliability and longevity. The low saturation voltage reduces conduction losses, improving overall circuit efficiency. These advantages make it a preferred choice for industrial and power applications that require both performance and durability.

JANSM2N3634UB-Transistor Brand Info

The JANSM2N3634UB transistor is a product associated with established semiconductor manufacturers specializing in power transistors for industrial and commercial use. This device is typically offered by brands known for high-reliability components suited for power amplification and switching. The product??s design and packaging reflect decades of industry expertise, focusing on ruggedness and consistent electrical performance. It is widely sourced through authorized distributors and supports engineers?? needs for dependable, long-lasting components in demanding applications.

FAQ

What is the maximum collector current rating for this transistor?

The transistor can handle a maximum continuous collector current of 20 amperes, making it suitable for high-power applications where significant current flow is required without damaging the device.

What type of package does the transistor use, and why is it important?

This device is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical robustness. This packaging helps maintain lower junction temperatures under high power dissipation, enhancing reliability and lifespan.

Can this transistor be used in high-temperature environments?

Yes, it is rated for a maximum junction temperature of 200 degrees Celsius

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