JANSD2N3636UB-Transistor NPN Power Amplifier in TO-3 Package ?C High Performance

JANSD2N3636UB-Transistor Overview

The JANSD2N3636UB is a high-performance NPN bipolar junction transistor optimized for switching and amplification in industrial and electronic applications. Designed for medium power operation, it offers robust current gain and voltage handling capabilities. Its packaging and electrical characteristics make it suitable for reliable integration in control circuits, power management modules, and signal amplification stages. Sourced from IC Manufacturer, this transistor delivers consistent performance with a focus on durability and efficiency under moderate thermal conditions.

JANSD2N3636UB-Transistor Technical Specifications

JANSD2N3636UB-Transistor Key Features

• Medium power handling: Supports collector currents up to 0.8 A, enabling effective use in moderate power switching applications.
• High voltage tolerance: With a maximum collector-emitter voltage of 60 V, it offers reliable performance in circuits requiring moderate voltage margins.
• Wide gain bandwidth: The 100 MHz transition frequency allows for efficient amplification and switching at high speeds, benefiting signal processing tasks.
• Robust DC current gain range: Variable gain between 30 and 300 provides design flexibility for different biasing and amplification requirements.
• Compact TO-92 package: Enables easy integration in space-constrained board layouts while maintaining thermal efficiency.
• Wide temperature tolerance: Operates reliably from -55??C to +150??C, suitable for industrial environments.

Typical Applications

• Switching circuits in industrial control systems where moderate current and voltage handling is required, ensuring reliable operation under variable load conditions.
• General-purpose amplification for signal conditioning in analog electronic devices.
• Driver stages for relays or low-power motors in automation equipment.
• Interface circuits in embedded control modules where space and power efficiency are critical.

JANSD2N3636UB-Transistor Advantages vs Typical Alternatives

This transistor stands out for its balanced combination of moderate power capacity and high-frequency response, which many alternatives lack at similar cost and package sizes. The broad DC gain range enhances design adaptability, while the TO-92 package facilitates easy installation and thermal dissipation. Compared to typical small-signal transistors, it offers greater voltage and current handling, improving reliability and performance in industrial switching and amplification tasks.

JANSD2N3636UB-Transistor Brand Info

The JANSD2N3636UB is manufactured under the JAN (Joint Army-Navy) standard, ensuring stringent quality and reliability criteria suitable for military and industrial-grade applications. This designation indicates compliance with rigorous testing and certification processes, providing enhanced durability and stable performance. The transistor is produced by a reputable semiconductor manufacturer specializing in robust, high-quality discrete components designed for demanding environments.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 0.8 A (800 mA). Operating within this limit ensures reliable switching and amplification performance without damaging the device.

Can this transistor handle high-frequency switching