JANTX2N6352P-Darlington-PIND Overview
The JANTX2N6352P is a high-reliability Darlington transistor designed for military and aerospace applications, featuring a PIND (Particle Impact Noise Detection) tested hermetically sealed package. This device offers robust performance with high voltage and current ratings, ensuring dependable operation in harsh environments. Its Darlington configuration provides high current gain, making it suitable for switching and amplification in demanding industrial systems. The transistor meets stringent military standards, reflecting its quality and reliability. Available through IC Manufacturer, it is engineered for critical applications requiring superior durability and consistent electrical characteristics.
JANTX2N6352P-Darlington-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 4 A (continuous) |
| Gain Bandwidth Product (fT) | Variable, typical for Darlington configuration |
| DC Current Gain (hFE) | Minimum 1000 at IC=1 A |
| Power Dissipation (PD) | 30 W (maximum) |
| Operating Temperature Range | -65??C to +200??C |
| Package Type | Hermetically sealed metal can (TO-39) |
| Testing Standard | PIND tested for contamination detection |
JANTX2N6352P-Darlington-PIND Key Features
- High current gain: The Darlington pair configuration delivers a minimum DC current gain of 1000, allowing efficient amplification and switching with minimal base drive.
- Hermetically sealed package with PIND testing: Ensures device integrity and contamination-free operation, critical for aerospace and military environments.
- Wide operating temperature range: Supports reliable functionality from -65??C up to +200??C, suitable for extreme industrial conditions.
- Robust voltage and current ratings: Capable of handling collector-emitter voltages up to 80 V and continuous collector currents up to 4 A, making it versatile for power control applications.
Typical Applications
- Switching and amplification in aerospace control systems requiring high reliability and stable gain across temperature extremes.
- Military-grade power drivers for actuators and relay control circuits where durability under stress is mandatory.
- Industrial automation equipment where precise switching and high current capacity improve system performance.
- High-reliability instrumentation amplifiers in harsh environments, benefiting from the device??s contamination resistance and hermetic sealing.
JANTX2N6352P-Darlington-PIND Advantages vs Typical Alternatives
This transistor offers superior current gain and robust voltage handling compared to standard transistors, enhancing sensitivity and switching accuracy. The hermetically sealed PIND-tested package ensures higher reliability and contamination resistance, critical in aerospace and military applications. Its extended temperature range and strict quality standards provide dependable operation where typical commercial alternatives may fail, making it a preferred choice for mission-critical systems.
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JANTX2N6352P-Darlington-PIND Brand Info
The JANTX2N6352P is a JEDEC-registered part number indicating a military-grade transistor built to rigorous standards. It is typically sourced from manufacturers specializing in high-reliability semiconductor components for defense and aerospace sectors. The “JAN” prefix denotes Joint Army-Navy qualification, assuring compliance with military specifications for environmental and electrical performance. This transistor??s brand lineage reflects a commitment to quality, longevity, and performance in demanding industrial and defense applications.
FAQ
What is the significance of the PIND test for this Darlington transistor?
The PIND (Particle Impact Noise Detection) test verifies that the device??s hermetic seal is intact and free from internal contamination such as loose particles. This ensures reliability and prevents premature failure in critical applications, especially in aerospace and military environments where
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