JAN2N3467-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

  • Amplifies electrical signals efficiently, enabling improved circuit performance and signal control.
  • Features a voltage rating suitable for handling moderate power levels in various electronic applications.
  • Compact package reduces board space, facilitating denser and more efficient circuit designs.
  • Ideal for switching and amplification tasks in consumer electronics, enhancing device responsiveness.
  • Manufactured to meet industry standards, ensuring consistent performance and operational reliability.
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JAN2N3467-Transistor Overview

The JAN2N3467 transistor is a high-performance NPN silicon transistor designed for medium power and switching applications. Featuring a collector-emitter voltage rating of 100V and a collector current capacity of up to 0.8A, it ensures robust operation in industrial and military-grade environments. This transistor is well-suited for amplification and switching tasks where reliability and consistent performance are critical. Its rugged construction complies with JAN (Joint Army-Navy) standards, making it ideal for defense and aerospace applications. Engineers and sourcing specialists can trust the device??s stable electrical characteristics and thermal capabilities for demanding circuit designs. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N3467-Transistor Technical Specifications

Parameter Value Units
Type NPN Silicon
Collector-Emitter Voltage (Vce) 100 Volts
Collector-Base Voltage (Vcb) 100 Volts
Emitter-Base Voltage (Veb) 5 Volts
Collector Current (Ic) 0.8 Amperes
Power Dissipation (Pc) 12.5 Watts
Gain Bandwidth Product (fT) 80 MHz
DC Current Gain (hFE) 40 to 160
Operating Temperature Range -65 to +200 ??C

JAN2N3467-Transistor Key Features

  • High Voltage Handling: Supports up to 100V collector-emitter voltage, enabling operation in power control circuits and medium-voltage switching.
  • Robust Collector Current: Capable of 0.8A continuous collector current, suitable for driving medium loads without thermal stress.
  • Wide Operating Temperature Range: Functional from -65??C to +200??C, ensuring reliability in harsh industrial and military environments.
  • JAN Qualified Reliability: Manufactured to stringent Joint Army-Navy standards, guaranteeing durability and consistency for aerospace and defense.

Typical Applications

  • Medium power switching and amplification in industrial control systems requiring reliable transistor operation at elevated voltages and currents.
  • Driver stages in audio amplifiers where linearity and gain stability are essential for signal fidelity.
  • Military and aerospace electronic systems, benefiting from the transistor??s rugged construction and extended temperature tolerance.
  • General-purpose amplification and switching tasks in instrumentation and communication equipment.

JAN2N3467-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to typical small-signal transistors, making it advantageous for medium power applications. Its JAN certification ensures enhanced reliability and thermal tolerance, which is critical in defense and aerospace sectors. The wide gain range supports flexible design requirements, improving accuracy and control efficiency in switching circuits. Its robust construction reduces failure rates compared to commercial-grade alternatives.

JAN2N3467-Transistor Brand Info

The JAN2N3467 transistor is a military-grade device originally developed under the Joint Army-Navy (JAN) standard, ensuring compliance with rigorous quality and reliability requirements. It is manufactured by multiple reputable semiconductor producers specializing in high-reliability components for defense and aerospace applications. The JAN prefix indicates strict screening processes, burn-in testing, and extended temperature range capabilities, making it a trusted choice for engineers demanding dependable performance in critical systems.

FAQ

What is the maximum collector current for this transistor?

The transistor supports a maximum continuous collector current of 0.8 amperes, allowing it to handle medium power loads effectively without exceeding thermal limits.

Can this transistor operate at high temperatures?

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