JAN2N2945AUB-Transistor NPN Power Amplifier in TO-3 Package by JAN

JAN2N2945AUB-Transistor Overview

The JAN2N2945AUB is a high-performance PNP bipolar junction transistor designed for industrial and military-grade applications requiring robust power handling and reliable switching capabilities. Featuring a high collector current capacity and stable gain characteristics, this transistor supports efficient amplification and switching in demanding environments. Its ruggedized construction meets stringent military standards, ensuring durability under thermal and electrical stress. The device is well-suited for power regulation, amplification stages, and general-purpose switching in complex electronic assemblies. For detailed product sourcing and technical support, visit IC Manufacturer.

JAN2N2945AUB-Transistor Technical Specifications

JAN2N2945AUB-Transistor Key Features

• High Collector Current Capacity: Supports up to 600 mA for efficient handling of moderate power loads, reducing thermal stress in circuits.
• Wide Operating Temperature Range: Reliable performance from -55??C to +150??C ensures suitability for harsh industrial and military environments.
• Hermetic TO-18 Package: Metal can encapsulation provides excellent protection against moisture and mechanical damage, enhancing long-term reliability.
• Consistent Gain Characteristics: DC current gain range of 40 to 320 allows flexible design options for amplification and switching applications.

Typical Applications

• Power Amplification Stages: Ideal for use in medium power amplification circuits requiring stable gain and high current handling.
• Switching Circuits: Effective in switching applications where robust performance and fast response are critical.
• Industrial Control Systems: Suitable for controlling loads and signal conditioning under harsh environmental conditions.
• Military and Aerospace Electronics: Designed to meet MIL-STD requirements, enabling dependable operation in defense and aerospace systems.

JAN2N2945AUB-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and robustness compared to typical low-cost alternatives due to its hermetic metal can packaging and military-grade compliance. Its capability to handle higher collector currents with consistent gain across a wide temperature range ensures enhanced performance in demanding industrial and defense applications. The device??s power dissipation rating and frequency response provide an optimal balance of efficiency and precision, making it a preferred choice for engineers seeking durable and accurate transistor solutions.

JAN2N2945AUB-Transistor Brand Info

The JAN2N2945AUB transistor is manufactured under the stringent quality and reliability standards of the Joint Army-Navy (JAN) specification, a hallmark of military-grade semiconductor components. Typically produced by established semiconductor manufacturers adhering to MIL-STD-883 and MIL-PRF-19500 standards, this transistor is recognized for its ruggedness and dependable performance in critical applications. Its metal can TO-18 package is a signature of devices intended for harsh environments, ensuring long-term stability and consistent electrical characteristics. This product is widely utilized in defense, aerospace, and industrial sectors where precision and durability are paramount.

FAQ

What is the maximum voltage rating of this transistor?

The maximum collector-emitter voltage rating is -60 volts, which defines the highest voltage the transistor can safely withstand between collector and emitter terminals under normal operating conditions.

Can this transistor operate reliably in extreme temperatures?