MSR2N2369AUBC-Transistor Overview
The MSR2N2369AUBC is a high-performance NPN bipolar junction transistor designed for low-power switching and amplification applications. Featuring a robust collector-emitter voltage rating and moderate current handling capabilities, it is well-suited for general-purpose industrial electronics and signal processing circuits. The device delivers reliable operation with stable gain characteristics, making it a solid choice for engineers seeking consistent performance in demanding environments. Sourced from a trusted supplier, this transistor supports efficient circuit design while ensuring durability and ease of integration. For detailed technical data and procurement, visit IC Manufacturer.
MSR2N2369AUBC-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 0.8 A (Max) |
| Gain Bandwidth Product (fT) | 100 MHz (Typ.) |
| DC Current Gain (hFE) | 100 to 300 |
| Collector Dissipation (PC) | 625 mW (Max) |
| Transition Frequency | 100 MHz |
| Package Type | TO-92 or equivalent compact encapsulation |
MSR2N2369AUBC-Transistor Key Features
- High voltage tolerance: Supports up to 40 V collector-emitter voltage, enabling use in moderate voltage switching and amplification circuits without breakdown risk.
- Moderate current capacity: Handles collector currents up to 0.8 A, suitable for driving small loads and interfacing with control logic effectively.
- Stable gain characteristics: Offers DC current gain ranging from 100 to 300, ensuring linear amplification and reliable signal processing.
- Wide bandwidth: Transition frequency near 100 MHz makes it appropriate for high-frequency switching and RF applications.
- Compact packaging: Available in a standard TO-92 or equivalent package, facilitating easy mounting in space-constrained industrial systems.
Typical Applications
- Used in signal amplification stages in industrial control systems where stable gain and moderate voltage handling are necessary, ensuring reliable signal integrity.
- Suitable for low to medium power switching applications in embedded electronics and automation interfaces.
- Applied in high-frequency oscillator circuits and RF amplifiers due to its 100 MHz transition frequency.
- Employed in driver stages for small relays and actuators within industrial equipment requiring compact and efficient transistor solutions.
MSR2N2369AUBC-Transistor Advantages vs Typical Alternatives
This transistor excels in balancing voltage handling, current capacity, and bandwidth, offering engineers a versatile device for general-purpose amplification and switching. Compared to typical alternatives, it provides reliable gain with low power dissipation, enhancing circuit efficiency and longevity. Its compact package and stable performance under varying conditions make it a preferred choice for industrial applications demanding robustness and consistency.
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MSR2N2369AUBC-Transistor Brand Info
The MSR2N2369AUBC is manufactured by MSemi, a recognized semiconductor brand specializing in high-quality discrete devices for industrial and consumer electronics. MSemi??s transistors are known for their rigorous quality control and adherence to industry standards, ensuring dependable performance in both prototyping and mass production. This specific transistor model aligns with MSemi??s commitment to delivering cost-effective, reliable components optimized for a wide range of electronic circuit designs.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating for this transistor is 0.8 A. This allows it to handle moderate current loads commonly found in switching and amplification tasks without risk of damage.
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Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency of approximately 100 MHz, this







