JANTX2N3468L-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • It features a voltage rating that ensures safe operation under typical load conditions, preventing damage.
  • The compact package design allows for board-space savings, ideal for dense circuit layouts.
  • In switching applications, this device provides reliable performance, improving overall system responsiveness.
  • Manufactured under strict quality controls, it offers consistent operation and long-term reliability.
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JANTX2N3468L-Transistor Overview

The JANTX2N3468L is a military-grade NPN bipolar junction transistor designed for high-reliability applications requiring robust performance under rigorous environmental conditions. Featuring a high voltage rating and a complementary power handling capacity, this transistor is optimized for switching and amplification tasks in aerospace, defense, and industrial electronics. Its hermetic metal-can package ensures long-term stability and resistance to thermal and mechanical stress. Engineers and sourcing specialists can rely on this component for critical circuits demanding consistent gain and dependable operation. For sourcing and technical details, visit IC Manufacturer.

JANTX2N3468L-Transistor Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)100 V
Collector-Base Voltage (VCBO)120 V
Emitter-Base Voltage (VEBO)7 V
Collector Current (IC)10 A (Pulse)
Power Dissipation (PD)30 W
DC Current Gain (hFE)30 to 70 (at IC = 0.5 A)
Transition Frequency (fT)3 MHz
Operating Temperature Range-65 ??C to +200 ??C
Package TypeHermetic Metal Can (TO-39)

JANTX2N3468L-Transistor Key Features

  • High Voltage Capability: Supports collector-emitter voltage up to 100 V, enabling operation in high-voltage switching and amplification circuits.
  • Robust Power Dissipation: 30 W power rating allows for efficient heat management in demanding industrial environments.
  • Wide Operating Temperature Range: From -65 ??C to +200 ??C, ensuring reliable functionality in extreme temperature conditions typical of aerospace and military applications.
  • Hermetic Packaging: Metal-can TO-39 package offers superior mechanical protection and environmental sealing, enhancing long-term reliability.
  • High Pulse Collector Current: Capable of handling 10 A pulse currents, making it suitable for transient high-power switching tasks.
  • Consistent Gain Performance: DC current gain (hFE) ranges from 30 to 70, providing stable amplification characteristics for precision circuit designs.

Typical Applications

  • High-reliability aerospace and defense electronics requiring rugged transistors for amplification and switching under extreme environmental conditions.
  • Industrial power control systems where robust voltage and current handling are essential for motor drives and power converters.
  • Military communication equipment that demands consistent gain and long-term stability in harsh thermal and mechanical environments.
  • Test and measurement instrumentation circuits needing precise transistor parameters with dependable performance over extended temperature ranges.

JANTX2N3468L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to standard commercial devices, making it ideal for rugged industrial and military use. Its hermetic metal-can packaging ensures enhanced reliability and environmental resistance, which typical plastic-encapsulated transistors cannot match. The wide operating temperature range and pulse current capacity provide engineers with a dependable component for high-stress applications, delivering consistent gain and power handling where precision and durability are critical.

JANTX2N3468L-Transistor Brand Info

The JANTX2N3468L is a JAN (Joint Army-Navy) qualified transistor, manufactured to meet stringent military standards for quality and performance. Originally standardized by major semiconductor producers compliant with MIL

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