JANS2N3636UB-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

JANS2N3636UB-Transistor Overview

The JANS2N3636UB is a high-performance bipolar junction transistor (BJT) designed for demanding electronic applications requiring reliable switching and amplification. Engineered with a robust construction, it offers stable operation under varied temperature and voltage conditions, making it suitable for industrial and military-grade environments. This transistor supports medium power levels with controlled gain characteristics, ensuring consistent performance in signal processing and power regulation tasks. Its compatibility with standard transistor circuits facilitates seamless integration. For procurement and detailed technical support, visit IC Manufacturer.

JANS2N3636UB-Transistor Technical Specifications

JANS2N3636UB-Transistor Key Features

• High Collector Current Capacity enables efficient handling of medium power loads, reducing the need for additional components in power amplification circuits.
• Wide Voltage Rating up to 80 V collector-emitter voltage allows for use in voltage regulation and switching applications with moderate voltage requirements.
• Robust TO-39 Metal Can Package ensures excellent thermal dissipation and mechanical durability for reliable operation in harsh industrial or military environments.
• Consistent Gain Performance across a broad operating range provides predictable amplification, essential for precision analog circuit designs.

Typical Applications

• Power amplification in audio and RF signal circuits where medium power handling and linearity are critical for sound and signal integrity.
• Switching applications in industrial control systems that require reliable transistor operation under varying load and temperature conditions.
• Voltage regulation circuits requiring stable gain and voltage handling to maintain consistent output under fluctuating input conditions.
• Military and aerospace electronics that demand rugged components with robust packaging and proven performance under stress.

JANS2N3636UB-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of high collector current capacity and voltage tolerance within a rugged metal can package, offering superior thermal management and reliability compared to plastic encapsulated alternatives. Its stable gain and frequency response make it ideal for precision amplification and switching, outperforming typical transistors in demanding industrial and military settings where endurance and consistent performance are paramount.

JANS2N3636UB-Transistor Brand Info

The JANS2N3636UB transistor is produced under the JANS (Joint Army-Navy) standard, ensuring compliance with stringent military specifications for quality and reliability. These devices are typically manufactured by established semiconductor companies adhering to MIL-STD-750 testing protocols, which guarantee durability in harsh environments. The TO-39 metal can package and rigorous screening process make this transistor a preferred choice for defense and aerospace sectors, as well as high-reliability industrial applications.

FAQ

What type of transistor is the JANS2N3636UB?

The device is an NPN bipolar junction transistor designed for medium power applications. It operates reliably with a collector current of up to 3 A and can sustain collector-emitter voltages up to 80 V, suitable for switching and amplification tasks.

In what package is this transistor supplied, and why is it important?

The transistor comes in a TO-39 metal can package, which provides excellent thermal conductivity and mechanical protection. This packaging ensures durability and stable performance in environments with temperature variations and mechanical stress.

What are the typical applications for this transistor?

This transistor is commonly used in power amplification circuits, industrial switching systems, voltage regulators, and