JANTXV2N3762U4-Transistor NPN High Voltage Transistor in TO-3 Package ?C ON Semiconductor

JANTXV2N3762U4-Transistor Overview

The JANTXV2N3762U4 is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification in industrial and military-grade applications. This transistor features a high voltage rating and superior current handling capabilities, ensuring reliable operation under demanding conditions. Its durable construction complies with JAN (Joint Army-Navy) standards, making it suitable for harsh environments that require enhanced reliability and long-term stability. Ideal for engineers and sourcing specialists, this device offers consistent performance in power regulation, signal amplification, and switching circuits. For detailed sourcing and technical support, visit IC Manufacturer.

JANTXV2N3762U4-Transistor Technical Specifications

JANTXV2N3762U4-Transistor Key Features

• High voltage and current rating: Enables handling of heavy loads and high power applications without performance degradation.
• Wide operating temperature range: Ensures reliable operation in extreme environments from -65??C up to +200??C, critical for aerospace and military uses.
• Robust metal can packaging (TO-3): Provides excellent thermal dissipation and mechanical protection, enhancing device longevity and stability.
• Consistent gain characteristics: Facilitates predictable amplification and switching behavior, simplifying circuit design and improving system reliability.

Typical Applications

• Power amplification circuits in industrial control systems where high current and voltage handling are essential for driving loads.
• Switching devices in military and aerospace equipment requiring rugged and reliable transistor performance under harsh conditions.
• Linear amplifiers in communication devices that demand stable gain and low distortion for signal integrity.
• Voltage regulation and power management modules in ruggedized systems operating in extreme temperature environments.

JANTXV2N3762U4-Transistor Advantages vs Typical Alternatives

This transistor offers a strong advantage over typical alternatives due to its high current and voltage ratings combined with a wide junction temperature range, making it ideal for demanding industrial and military applications. Its metal can TO-3 package ensures superior thermal management and mechanical durability. These attributes translate into enhanced reliability, consistent performance, and longevity, which are critical in environments where failure is not an option.

JANTXV2N3762U4-Transistor Brand Info

The JANTXV2N3762U4 transistor is manufactured under rigorous military standards, commonly associated with established semiconductor producers specializing in defense and industrial components. The JAN (Joint Army-Navy) designation ensures that this transistor meets strict quality and reliability criteria mandated for government and aerospace applications. This product is recognized for its rugged packaging and dependable electrical characteristics, making it a trusted choice among engineers and sourcing specialists who require high-reliability components for critical systems.

FAQ

What type of transistor is the JANTXV2N3762U4, and what are its primary electrical characteristics?

The device is an NPN bipolar junction transistor (BJT) designed for high-power switching and amplification. It supports a maximum collector-emitter voltage of 60 V, collector current up to 8 A, and power dissipation up to 75 W, making it suitable for demanding applications requiring robust electrical performance.

What makes the packaging of this transistor significant for industrial applications?