The JANS2N5151U3 is a high-performance NPN bipolar junction transistor designed for robust amplification and switching applications. Engineered to meet stringent military and industrial standards, this transistor offers reliable operation under demanding conditions. Its high voltage and current ratings make it suitable for a range of electronic circuits requiring stable, efficient performance. Available with a hermetic metal can package, it ensures enhanced thermal dissipation and environmental protection. Sourcing specialists and engineers will find this device ideal for applications requiring durability, precision, and long-term reliability. For detailed inquiries and procurement, visit IC Manufacturer.
JANS2N5151U3-Transistor Technical Specifications
Parameter
Specification
Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
80 V
Collector-Base Voltage (VCBO)
100 V
Emitter-Base Voltage (VEBO)
7 V
Collector Current (IC)
1 A
Power Dissipation (PTot)
625 mW
Transition Frequency (fT)
100 MHz
DC Current Gain (hFE)
40 to 160
Package Type
Hermetic Metal Can (TO-18)
JANS2N5151U3-Transistor Key Features
High voltage tolerance: With a collector-base voltage rating of 100 V, it supports high-voltage switching operations safely, ensuring circuit robustness.
Wide current handling capability: Supports collector currents up to 1 A, enabling versatility in medium-power amplification and switching tasks.
Hermetic metal can packaging: Provides excellent thermal conduction and environmental protection, enhancing device longevity and reliability in harsh conditions.
Broad current gain range: DC gain between 40 and 160 allows for flexible design options in amplification circuits.
High frequency performance: Transition frequency of 100 MHz supports moderate-speed switching and amplification in RF and analog applications.
Low power dissipation: Maximum power rating of 625 mW allows for efficient thermal management in compact electronic designs.
Typical Applications
Signal amplification in analog circuits including audio and intermediate frequency stages, where reliable gain and linearity are essential.
Switching devices in industrial control systems requiring robust and consistent performance under varying loads.
Low to medium power driver stages in communication equipment, benefiting from the transistor??s frequency capabilities and gain range.
General-purpose amplification and switching in military and aerospace applications, leveraging the hermetic package for environmental resistance.
JANS2N5151U3-Transistor Advantages vs Typical Alternatives
This transistor??s hermetic metal can packaging offers superior environmental protection compared to plastic-encapsulated alternatives, enhancing reliability in harsh environments. Its high voltage and current ratings combined with a broad gain range provide engineers with precise control and durability. The moderate transition frequency supports diverse analog and switching applications, making it a versatile and trusted choice for industrial and military-grade electronic designs.
The JANS2N5151U3 is manufactured under the JANS series, a designation typically associated with transistors compliant with military specifications (MIL-SPEC). These devices are produced by established semiconductor manufacturers specializing in high-reliability components for defense and industrial sectors. This transistor is known for rigorous quality control, hermetic sealing, and adherence to MIL-PRF-19500 standards, ensuring robust performance in critical applications where failure is not an option.
FAQ
What is the maximum collector current rating for this transistor?
