JANTXV2N2604UB-Transistor Overview
The JANTXV2N2604UB is a robust NPN bipolar junction transistor (BJT) designed for high-reliability applications requiring stable performance under stress. Manufactured to meet military and aerospace standards, this transistor offers excellent electrical characteristics, including high voltage and current ratings, combined with durable construction. It is optimized for use in high-frequency amplification and switching circuits, providing engineers and sourcing specialists with a dependable component for mission-critical systems. The device??s compliance with JAN (Joint Army-Navy) specifications ensures consistent quality and long-term reliability across demanding industrial environments. For more details, visit IC Manufacturer.
JANTXV2N2604UB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 1 | A |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40 to 100 | |
| Power Dissipation (PD) | 1.0 | W |
| Junction Temperature (TJ) | 200 | ??C |
| Package Type | TO-18 Metal Can |
JANTXV2N2604UB-Transistor Key Features
- High voltage ratings: Supports up to 100 V collector-base voltage, enabling use in power amplification and switching applications requiring elevated voltage tolerance.
- Wide current handling: Capable of continuous collector current up to 1 A, suitable for moderate power output and control circuits.
- Military-grade construction: Designed to meet JAN reliability standards, ensuring consistent performance in harsh industrial and aerospace environments.
- High-frequency operation: Gain bandwidth product of 100 MHz supports efficient performance in RF amplification and signal processing circuits.
- Thermal robustness: Junction temperature rating up to 200??C allows operation under elevated thermal conditions without degradation.
- Metal can packaging: TO-18 hermetic metal can package provides excellent mechanical stability and improved heat dissipation.
Typical Applications
- High-frequency amplifier stages in communication and radar systems, leveraging its high gain bandwidth for signal integrity and amplification efficiency.
- Switching circuits requiring reliable operation under elevated voltages and currents, common in industrial control and power management.
- Military and aerospace electronic systems demanding rugged components that comply with strict quality and reliability standards.
- General-purpose amplification in instrumentation and sensor interface circuits where stable linear performance is critical.
JANTXV2N2604UB-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and voltage endurance compared to standard commercial transistors. Its compliance with military specifications ensures enhanced ruggedness and thermal stability, critical for harsh environments. The metal can package improves heat dissipation and mechanical durability, reducing failure rates. Additionally, the device??s high-frequency capability and broad current range provide engineers with flexibility for diverse industrial and aerospace designs where precision and dependability are paramount.
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JANTXV2N2604UB-Transistor Brand Info
The JANTXV2N
