JAN2N3765-Transistor Overview
The JAN2N3765 transistor is a high-performance silicon NPN bipolar junction transistor (BJT) designed for medium power switching and amplification applications. Its robust electrical characteristics, including a collector-emitter voltage rating of 100 V and a collector current of up to 10 A, make it ideal for use in industrial and military-grade electronic circuits. The device??s low saturation voltage and high gain ensure efficient operation in power control stages. Manufactured to stringent JAN (Joint Army-Navy) standards, this transistor delivers reliability and durability required in harsh environments. For detailed sourcing and technical support, visit IC Manufacturer.
JAN2N3765-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 10 A (max) |
| Power Dissipation (Ptot) | 125 W |
| DC Current Gain (hFE) | Minimum 30 at IC=4 A |
| Transition Frequency (fT) | 5 MHz (typical) |
| Operating Temperature Range | -65??C to +200??C |
| Package Type | TO-3 Metal Can |
JAN2N3765-Transistor Key Features
- High Collector Current Handling: Supports continuous current up to 10 A, enabling use in demanding power switching applications.
- Robust Voltage Ratings: Withstands collector-emitter voltages up to 100 V, ensuring reliability in high-voltage circuits.
- Military-Grade Quality: Manufactured under JAN specifications to meet strict quality and environmental standards for defense and aerospace systems.
- Thermal Stability: Operates efficiently across a wide temperature range (-65??C to +200??C), suitable for harsh industrial environments.
Typical Applications
- Power Amplification: Used in audio and RF power amplifier stages requiring high current and stable gain characteristics over varying load conditions.
- Switching Regulators: Suitable for high current switching in regulated power supplies and converter circuits.
- Motor Control Circuits: Effective in driving motors and solenoids where robust current capacity and voltage tolerance are critical.
- Industrial and Military Electronics: Ideal for use in ruggedized electronic systems demanding high reliability under extreme temperature and mechanical stress.
JAN2N3765-Transistor Advantages vs Typical Alternatives
This transistor delivers superior performance in terms of collector current capacity and voltage handling compared to many standard BJTs. Its military-grade JAN certification guarantees enhanced reliability and consistent operation in extreme environments, unlike commercial-grade alternatives. The TO-3 metal can package offers excellent thermal dissipation, making it a preferred choice for applications requiring both power efficiency and long-term durability.
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JAN2N3765-Transistor Brand Info
The JAN2N3765 is originally produced under the Joint Army-Navy (JAN) specification, indicating it meets rigorous military standards for quality, performance, and reliability. This transistor is commonly manufactured by established semiconductor companies specializing in defense and industrial components, ensuring consistent compliance with MIL-STD-750 testing protocols. The JAN marking ensures traceability and suitability for mission-critical applications where failure is not an option.
FAQ
What is the maximum collector current rating of the JAN2N3765 transistor?
The maximum continuous collector current rating is 10 amperes, allowing the device to handle substantial current loads in power control and amplification circuits without damage.
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Can the JAN2N3765 transistor operate in high-temperature environments?
Yes, it is designed to operate reliably within a temperature range from -65??C up to +200??C, making it suitable for industrial and military applications exposed to extreme temperatures.
