JAN2N3765L-Transistor NPN Power Transistor in TO-3 Package by JAN Semiconductor

JAN2N3765L-Transistor Overview

The JAN2N3765L transistor is a high-power NPN bipolar junction transistor tailored for industrial and military-grade applications. Designed to operate efficiently in demanding environments, this transistor delivers robust voltage and current handling capabilities with reliable switching performance. It supports a collector-emitter voltage of up to 100V and collector current up to 10A, making it suitable for power amplification and switching tasks. With its rugged construction and compliance to JAN (Joint Army-Navy) standards, this transistor ensures enhanced durability and stability under harsh operational conditions. For detailed product sourcing and technical assistance, visit IC Manufacturer.

JAN2N3765L-Transistor Technical Specifications

JAN2N3765L-Transistor Key Features

• High voltage blocking capability: Supports collector-emitter voltages up to 100V, allowing use in high-voltage power switching circuits.
• Robust collector current rating: Handles continuous currents up to 10A, suitable for demanding power amplification tasks.
• Wide operating temperature range: Ensures reliable performance from -65??C to +200??C, ideal for military and industrial environments.
• JAN military specification compliance: Guarantees enhanced reliability and quality control for critical defense applications.

Typical Applications

• Power amplifier stages in industrial control systems requiring high current and voltage handling with stable gain.
• Switching regulators and power conversion circuits where efficient high-power switching is essential.
• Motor control circuits demanding rugged transistors capable of sustained operation under elevated temperatures.
• Military and aerospace electronics requiring devices that meet stringent quality and environmental standards.

JAN2N3765L-Transistor Advantages vs Typical Alternatives

This transistor provides superior voltage and current ratings combined with a high power dissipation capability, which outperforms many standard transistors in harsh conditions. Its compliance with military-grade JAN specifications ensures enhanced reliability and longevity, making it preferable over commercial-grade devices in critical applications. The wide operating temperature range and robust gain characteristics deliver consistent performance, reducing failure rates and maintenance costs in industrial and defense systems.

JAN2N3765L-Transistor Brand Info

The JAN2N3765L is a product originally produced under strict military standards by established semiconductor manufacturers known for high-reliability devices. Typically sourced from legacy manufacturers specializing in military and aerospace components, it is part of the 2N3765 transistor family, redesigned to meet stringent JAN (Joint Army-Navy) certification requirements. This designation ensures that the device has passed rigorous quality screening, including temperature cycling and electrical stress tests, making it a trusted choice for defense contractors and industrial equipment manufacturers.

FAQ

What voltage and current limits define the JAN2N3765L transistor?

The transistor supports a maximum collector-emitter voltage of 100V and a continuous collector current rating of up to 10A. These limits enable it to handle high-power