JANTX2N5661P-Transistor-PIND Power NPN Transistor in PIND Package by ON Semiconductor

  • This transistor amplifies current, enabling efficient switching and signal control in electronic circuits.
  • Its high voltage rating ensures stable performance under demanding electrical conditions.
  • The PIND package offers a compact footprint, facilitating space-saving designs on circuit boards.
  • Ideal for use in power regulation modules, it helps maintain consistent output and system stability.
  • Manufactured to meet strict quality standards, it provides dependable operation over extended periods.
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JANTX2N5661P-Transistor-PIND Overview

The JANTX2N5661P is a high-performance PNP bipolar junction transistor designed for precision switching and amplification in demanding industrial applications. Manufactured under the JAN (Joint Army-Navy) standard, it offers enhanced reliability and ruggedness, suitable for military and aerospace environments. This transistor is optimized for medium power handling with excellent gain characteristics, ensuring consistent operation across wide temperature ranges. Its robust construction and strict screening make it ideal for critical systems requiring dependable performance and long-term stability. For more information on semiconductor components, visit IC Manufacturer.

JANTX2N5661P-Transistor-PIND Technical Specifications

Parameter Specification
Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 2 A (max)
Power Dissipation (Ptot) 20 W (max)
DC Current Gain (hFE) 40 to 160 (at IC = 1 A)
Transition Frequency (fT) Minimum 1 MHz
Package Type TO-18 Metal Can

JANTX2N5661P-Transistor-PIND Key Features

  • High gain performance: Enables efficient amplification with stable operation, critical for precision signal processing.
  • Military-grade reliability: Qualified to JAN standards, ensuring robust performance in harsh environments and extended temperature ranges.
  • Medium power handling: Supports collector currents up to 2 A and power dissipation of 20 W, suitable for demanding switching applications.
  • Low noise characteristics: Optimized for low signal distortion, enhancing accuracy in sensitive analog circuits.

Typical Applications

  • Used in military and aerospace electronic systems requiring rugged transistor components with consistent gain and current handling under extreme conditions.
  • Suitable for driver and switching stages in industrial control equipment where reliable medium power transistors are necessary.
  • Applicable in analog signal amplification circuits demanding low noise and high stability over temperature variations.
  • Commonly employed in power regulation and interface circuits within precision instrumentation systems.

JANTX2N5661P-Transistor-PIND Advantages vs Typical Alternatives

The transistor offers superior reliability and consistency compared to commercial-grade counterparts due to its JAN certification. Its wide operating voltage and current ranges, combined with enhanced gain stability, make it an excellent choice for critical industrial and military applications. The rugged metal TO-18 package ensures better thermal management and durability, providing enhanced lifetime and operational confidence over typical plastic-encapsulated transistors.

JANTX2N5661P-Transistor-PIND Brand Info

The JANTX2N5661P is produced under stringent military standards, commonly associated with legacy semiconductor manufacturers specializing in defense-grade components. This transistor is part of the JAN (Joint Army-Navy) series, reflecting compliance with MIL-PRF-19500 specifications for quality and reliability. The device is typically supplied by established semiconductor brands that maintain long-term support and traceability for aerospace and defense customers. Its brand reputation is built on rigorous screening processes, ensuring high performance in mission-critical environments.

FAQ

What is the maximum collector current rating for this transistor?

The transistor can handle collector currents up to 2 amperes maximum, making it suitable for medium power applications where a reliable current flow is necessary without compromising stability.

What package type does this transistor use, and why is it important?

This device is housed

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