JANTX2N5666U3-Transistor Overview
The JANTX2N5666U3 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding switching and amplification applications in industrial electronics. Known for its robust construction and military-grade reliability, this transistor offers excellent power handling and gain characteristics suitable for high voltage and current environments. Its rugged design ensures stable operation under thermal and electrical stress, making it a preferred choice for engineers and sourcing specialists requiring dependable, long-lasting semiconductor components. Available through IC Manufacturer, it supports applications where precision and durability are critical.
JANTX2N5666U3-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector Current (Ic) | 10 A (maximum) |
| Power Dissipation (Ptot) | 80 W |
| Gain Bandwidth Product (fT) | 4 MHz (typical) |
| DC Current Gain (hFE) | 40 to 160 (depending on Ic and Vce) |
| Transition Frequency | 4 MHz (typical) |
| Operating Junction Temperature Range | -65??C to +200??C |
| Package Type | Hermetically Sealed Metal Can (TO-39) |
JANTX2N5666U3-Transistor Key Features
- High collector current of 10 A: Enables handling of substantial load currents, supporting power-intensive industrial circuits efficiently.
- Collector-emitter voltage rating up to 60 V: Ensures reliable operation in medium voltage applications without breakdown risk.
- Wide operating temperature range (-65??C to +200??C): Provides exceptional thermal stability and reliability in harsh environments.
- Hermetically sealed TO-39 metal can package: Enhances protection against contamination and mechanical stress, extending device lifespan.
Typical Applications
- Power switching and amplification in industrial control systems where high current and voltage handling are essential for reliable operation.
- Use in motor drive circuits requiring robust transistors to manage load currents and thermal stress.
- Audio power amplifiers demanding stable gain and durability under continuous operation.
- Military and aerospace electronics benefiting from the hermetically sealed metal package for enhanced environmental protection.
JANTX2N5666U3-Transistor Advantages vs Typical Alternatives
This transistor stands out against typical alternatives due to its high current capacity and wide voltage margin, ensuring enhanced reliability in power applications. The hermetically sealed metal can package offers superior environmental protection compared to plastic encapsulated transistors, improving long-term stability. Its extended temperature range makes it suitable for extreme conditions, while the substantial power dissipation rating supports demanding industrial and military requirements effectively.
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JANTX2N5666U3-Transistor Brand Info
The JANTX2N5666U3 is a military-grade transistor originally standardized under the Joint Army-Navy (JAN) designation system, ensuring stringent quality and reliability standards. This device is manufactured by reputable semiconductor producers specializing in high-reliability components for defense and aerospace applications. The JAN prefix indicates compliance with rigorous testing and certification processes, making it suitable for use in mission-critical systems. Its metal can packaging and robust electrical characteristics reflect the brand??s commitment to durable, high-performance discrete semiconductors.
FAQ
What is the maximum collector current of the JANTX2N5666U3 transistor?
The transistor supports a maximum collector current of 10 amperes, allowing it to handle significant load currents in power switching and amplification circuits while maintaining safe operation.
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What operating temperature range does this transistor support?
This device is rated for operation from -65??C up to +200??C, making it suitable for extreme temperature environments encountered in industrial and military applications.
