JANSD2N5151U3-Transistor Overview
The JANSD2N5151U3-Transistor is a high-performance bipolar junction transistor (BJT) designed for industrial and electronic switching applications. It offers robust amplification capabilities with reliable current handling and voltage ratings suitable for demanding environments. This transistor delivers efficient signal processing and switching with stable gain characteristics, making it ideal for use in control circuits, power management, and signal amplification. Engineers and sourcing specialists will find this device optimized for integration into various electronic systems requiring consistent performance and durability. For more detailed technical support and procurement options, visit IC Manufacturer.
JANSD2N5151U3-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector Current (Ic) | 1.5 A |
| Power Dissipation (Ptot) | 625 mW |
| Transition Frequency (fT) | 100 MHz |
| DC Current Gain (hFE) | 40 to 320 (varies by operating point) |
| Package Type | TO-92 |
| Operating Temperature Range | -55??C to +150??C |
| Base-Emitter Voltage (Vbe) | 5 V max |
JANSD2N5151U3-Transistor Key Features
- High current handling: Supports up to 1.5 A continuous collector current, enabling efficient power switching and amplification in medium-power circuits.
- Wide voltage rating: With a collector-emitter voltage of 60 V, it accommodates a broad range of industrial and consumer electronic applications.
- Stable gain performance: The device exhibits a DC current gain between 40 and 320, ensuring consistent amplification across varying load conditions.
- Compact TO-92 package: Facilitates easy integration into through-hole PCB designs, contributing to simplified assembly and maintenance.
Typical Applications
- Signal amplification in analog circuits, where stable gain and moderate power handling are required for audio or sensor signal processing.
- Switching applications in low to medium power DC circuits, such as relay drivers and LED control systems.
- Pulse generation and timing circuits, benefiting from the transistor??s fast switching and frequency response.
- General-purpose amplification and switching in consumer electronics, industrial controllers, and automotive circuitry.
JANSD2N5151U3-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage and current ratings that outperform many generic BJTs in similar form factors. Its wide operating temperature range and stable gain characteristics improve reliability and accuracy in control circuits. Compared to typical alternatives, it ensures increased efficiency in switching tasks and better integration flexibility due to its standardized TO-92 package, making it a practical choice for engineers seeking dependable performance in industrial and consumer applications.
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JANSD2N5151U3-Transistor Brand Info
The JANSD2N5151U3-Transistor is manufactured by JAN Semiconductor, a reputable supplier specializing in discrete semiconductor components for industrial electronics. The brand emphasizes quality, reliability, and consistent product performance to meet rigorous industry standards. This transistor is part of JAN??s extensive portfolio of bipolar junction transistors designed to support demanding applications in automation, instrumentation, and power management sectors.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current for this device is 1.5 A, which enables it to handle moderate power levels suitable for switching and amplification tasks in typical industrial circuits.
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Which package type does the transistor come in?
This transistor is supplied in a TO-92 package, a widely used through-hole format that simplifies mounting and replacement in various PCB designs.
Can this device be used for high-frequency applications?
With a transition frequency of approximately 100 MHz, this transistor is suitable for moderate frequency applications such as pulse generation and signal amplification but may not be ideal for very high-frequency RF circuits.
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What is the operating temperature range for reliable performance?
The device operates reliably over a temperature range from -55??C up to +150
