JANS2N5339-Transistor Overview
The JANS2N5339 transistor is a high-performance silicon NPN bipolar junction transistor designed for amplification and switching applications. Featuring robust electrical characteristics and a TO-18 metal can package, this transistor offers reliable operation in demanding environments. With a collector current rating suitable for medium-power applications and a high voltage tolerance, it is well-suited for aerospace, military, and industrial electronics systems requiring precision and long-term stability. The device provides stable gain and minimal leakage, ensuring consistent performance. For detailed sourcing and technical support, visit IC Manufacturer.
JANS2N5339-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 1 | A |
| Power Dissipation (Ptot) | 800 | mW |
| DC Current Gain (hFE) | 40 to 160 | |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | TO-18 metal can |
JANS2N5339-Transistor Key Features
- High voltage tolerance: Supports collector-emitter voltages up to 60 V, enabling use in medium-power amplification circuits.
- Wide current gain range: Offers hFE values between 40 and 160, allowing flexibility in gain settings for different circuit requirements.
- Durable TO-18 metal can package: Provides excellent thermal stability and mechanical robustness for reliable operation under harsh conditions.
- Moderate power dissipation: Rated for 800 mW total power, fitting well within low to medium power applications without complex heat sinking.
- High transition frequency (100 MHz): Suitable for high-speed switching and RF amplification tasks.
Typical Applications
- Used in aerospace and military-grade electronics where durability and stable gain under temperature variation are critical for signal amplification and switching.
- Suitable for general-purpose amplification tasks in industrial control circuits requiring reliable performance.
- Applicable in low noise radio frequency (RF) amplifier circuits due to its high transition frequency and stable gain characteristics.
- Employed in test equipment and instrumentation circuits that demand consistent transistor parameters for accurate measurements.
JANS2N5339-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and thermal stability thanks to its TO-18 metal can packaging, compared to typical plastic-encapsulated devices. Its wide gain range and high voltage ratings provide design flexibility and enhanced performance in medium-power applications. Additionally, the device’s stable frequency response and moderate power dissipation make it a preferred choice for precision amplification and switching over generic transistors.
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JANS2N5339-Transistor Brand Info
The JANS2N5339 is a JEDEC-registered transistor type commonly produced under military and aerospace standards. The ??JAN?? prefix denotes Joint Army-Navy qualification, ensuring stringent quality and reliability testing. This device is manufactured by multiple semiconductor suppliers adhering to MIL-STD-883 testing protocols. It is recognized for consistent electrical parameters and rugged construction, making it a standard choice in defense and industrial electronics markets where component trustworthiness is critical.
