JANTXV2N2880-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

JANTXV2N2880-Transistor Overview

The JANTXV2N2880 is a high-performance bipolar junction transistor (BJT) designed for applications requiring reliable switching and amplification at moderate power levels. Featuring a robust maximum collector-emitter voltage and substantial current handling capability, this transistor is engineered to deliver consistent performance in industrial and military-grade environments. Its low noise and high gain characteristics make it suitable for precision analog circuits, while the JANTXV2N2880??s rugged construction ensures durability under demanding operating conditions. Engineers and sourcing specialists can rely on this component from IC Manufacturer for dependable integration into power management, signal amplification, and switching subsystems.

JANTXV2N2880-Transistor Technical Specifications

JANTXV2N2880-Transistor Key Features

• High voltage handling capability: Supports up to 120 V collector-base voltage, enabling use in demanding power management circuits.
• Substantial collector current: Handles continuous current up to 3 A, suitable for medium power switching and amplification.
• Wide operating temperature range: Rated from -55??C to +200??C, ensuring reliable operation in harsh environmental conditions.
• Low noise and moderate gain: Provides stable signal amplification with a DC gain of 40 or higher.

Typical Applications

• Industrial control systems requiring robust switching transistors for motor drivers or relay control circuits, benefiting from high voltage and current ratings.
• Power amplifiers in audio or RF systems where moderate gain and low noise are essential for signal fidelity.
• Military and aerospace electronics that demand components capable of operating reliably under extreme temperatures and environmental stress.
• General-purpose amplification and switching in consumer electronics and industrial instrumentation.

JANTXV2N2880-Transistor Advantages vs Typical Alternatives

This transistor offers a compelling combination of high voltage tolerance and significant current handling, outperforming many standard BJTs in ruggedness and thermal endurance. Its broad operating temperature range ensures dependable function in critical industrial and military applications. Compared to typical small-signal transistors, it provides enhanced reliability and power dissipation capacity, which reduces the risk of thermal failure and improves overall circuit stability.

JANTXV2N2880-Transistor Brand Info

The JANTXV2N2880 is a military-grade transistor manufactured under the JAN (Joint Army-Navy) specification, ensuring stringent quality and reliability standards. This transistor is commonly produced by established semiconductor manufacturers specializing in defense and industrial-grade components. The JAN prefix denotes compliance with high-reliability requirements such as hermetic sealing and extended temperature ratings, making it suitable for aerospace and military electronics. The device is widely recognized in the industry for its proven performance and durability in demanding electronic systems.

FAQ

What does the ??JAN?? designation mean for the V2N2880 transistor?

The ??JAN?? prefix indicates that the transistor meets Joint Army-Navy military standards, which ensure higher reliability, stricter quality control, and extended environmental tolerance compared to commercial-grade components. This makes the device suitable for defense and aerospace applications requiring rugged performance.

Can this transistor handle high-power switching applications?

Yes, with a maximum collector current of 3 A and a power dissipation rating of 30 W, this transistor is well-suited for moderate power switching tasks, including motor control and relay driving