JAN2N5685-Transistor NPN High-Power Amplifier Transistor in TO-3 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient control of current flow in circuits.
  • Its high voltage rating ensures reliable operation under demanding electrical conditions.
  • The compact package reduces board space, facilitating integration into densely packed electronic designs.
  • Ideal for switching applications, it supports rapid response times for improved circuit performance.
  • Manufactured to meet stringent quality standards, ensuring consistent durability and dependable operation.
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JAN2N5685-Transistor Overview

The JAN2N5685 transistor is a high-performance NPN bipolar junction transistor designed for medium power and switching applications. It offers robust current handling capability, reliable gain characteristics, and stable operation under varying environmental conditions. With a maximum collector-emitter voltage of 80V and collector current up to 1.5A, it is well-suited for amplification and switching tasks in industrial control circuits and power regulation systems. This transistor is manufactured to meet military specifications, ensuring high reliability and durability in demanding applications. For more detailed technical data and sourcing options, visit IC Manufacturer.

JAN2N5685-Transistor Technical Specifications

Parameter Value
Polarity NPN
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (PD) 1.25 W
DC Current Gain (hFE) 50 to 150
Transition Frequency (fT) 100 MHz (typical)
Operating Temperature Range -55??C to +200??C
Package Type TO-18 Metal Can

JAN2N5685-Transistor Key Features

  • High voltage tolerance: Supports up to 80 V collector-emitter voltage, enabling operation in high-voltage switching circuits.
  • Robust current capacity: Handles collector currents up to 1.5 A for medium power amplification and load driving.
  • Wide operating temperature range: Reliable performance from -55??C to +200??C, suitable for harsh industrial environments.
  • Military-grade reliability: Manufactured to meet stringent JAN (Joint Army-Navy) standards for enhanced durability and consistency.

Typical Applications

  • Switching and amplification in industrial control systems requiring medium power transistors with high voltage and current ratings.
  • Driver stages for relays, solenoids, and other electromechanical loads in automated machinery.
  • Signal amplification in communication equipment operating under harsh environmental conditions.
  • Power regulation circuits, including voltage regulators and power management modules in military and aerospace applications.

JAN2N5685-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high voltage and current ratings with military-grade reliability, outperforming many standard commercial transistors in demanding environments. Its wide temperature tolerance and robust packaging ensure consistent performance, making it ideal for critical industrial and defense applications where sensitivity, accuracy, and long-term durability are essential.

JAN2N5685-Transistor Brand Info

The JAN2N5685 transistor is part of the JAN series, a designation indicating compliance with military standards for quality and reliability. These devices are typically manufactured by established semiconductor companies specializing in defense-grade components. The JAN prefix signifies rigorous screening processes including extended temperature and environmental testing, ensuring the transistor meets stringent performance criteria required by military and aerospace sectors. This transistor is commonly offered by manufacturers known for producing high-reliability semiconductor products compliant with MIL-STD-883 and similar standards.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this device is rated at 1.5 amperes, allowing it to handle medium power loads in switching and amplification applications without degradation.

Can the transistor operate in high-temperature environments?

Yes, it is designed to operate reliably within a temperature range from -55??C up to +200??C, making it suitable for use in harsh industrial and military environments.

What package type does this transistor use?

This transistor is housed in a TO-18 metal can package, providing excellent thermal conductivity and mechanical durability for rugged applications.

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