JANS2N3867S-Transistor High-Gain NPN Transistor in TO-18 Metal Can Package

JANS2N3867S-Transistor Overview

The JANS2N3867S is a high-power NPN bipolar junction transistor (BJT) designed for reliable switching and amplification in demanding industrial and military-grade applications. It features robust construction to withstand elevated temperatures and harsh environments, ensuring stable performance. This device offers a collector current capacity suitable for medium power stages and is optimized for linear and switching operations. Ideal for engineers and sourcing specialists requiring durable, consistent transistor solutions, the JANS2N3867S is a trusted choice from IC Manufacturer known for its stringent quality and reliability standards.

JANS2N3867S-Transistor Technical Specifications

JANS2N3867S-Transistor Key Features

• High Voltage Handling: Supports collector-emitter voltages up to 60 V, enabling use in medium power switching and amplification circuits.
• Robust Current Capacity: Handles collector currents up to 3 A, suitable for power driver stages and industrial control applications.
• Wide Operating Temperature Range: Rated for junction temperatures up to 200 ??C, ensuring reliable operation under harsh thermal conditions.
• Stable Gain Characteristics: Offers a DC current gain ranging from 40 to 160, providing flexibility in biasing and amplification design.

Typical Applications

• Power amplification in audio and RF circuits, leveraging high gain and current capacity for clear signal processing in industrial equipment.
• Switching elements in power management systems requiring reliable transistor response under high load conditions.
• Motor control and drive circuitry in automation systems, benefiting from robust voltage and current ratings.
• Military and aerospace electronic modules where rugged transistor performance and temperature resilience are critical.

JANS2N3867S-Transistor Advantages vs Typical Alternatives

This transistor offers superior thermal endurance and power dissipation compared to typical low-power BJTs, making it ideal for demanding industrial and military environments. Its high current capability combined with a wide gain range enhances design flexibility. The metal can TO-39 package improves heat dissipation and mechanical durability, providing a reliability advantage over plastic-encapsulated alternatives.

JANS2N3867S-Transistor Brand Info

The JANS2N3867S is a military-specification transistor variant primarily manufactured and distributed by trusted semiconductor suppliers specializing in high-reliability devices. The ??JAN?? designation indicates compliance with Joint Army-Navy standards, ensuring rigorous quality control and suitability for defense and aerospace applications. This transistor is a variant of the popular 2N3867 series, known for its robust electrical characteristics and long-term stability in extreme conditions. It is sourced through authorized IC manufacturers and distributors that uphold stringent traceability and certification protocols.

FAQ

What environments is the JANS2N3867S transistor best suited for?

The transistor is designed for harsh environments including military, aerospace, and industrial applications. Its ability to operate reliably at junction temperatures up to 200 ??C and withstand mechanical stress makes it suitable for extreme thermal and vibration conditions.

How does the collector current rating affect circuit design?

With a maximum collector current of 3 A, this transistor can handle moderate power loads, allowing engineers to implement it in driver stages and switching circuits that require higher current capacity than small-signal transistors.

What benefits does the TO-39 metal can package provide?