JANS2N2920L-Dual-Transistor Overview
The JANS2N2920L-Dual-Transistor is a high-performance dual NPN transistor designed for demanding industrial and military applications. Known for its rugged hermetic metal can package and stringent JAN (Joint Army-Navy) qualification, it delivers reliable switching and amplification in harsh environments. This transistor offers excellent gain characteristics, low saturation voltage, and robust thermal stability, making it ideal for precision analog and switching circuits. Sourcing specialists and engineers benefit from its proven durability and consistent electrical performance. For more details, visit IC Manufacturer.
JANS2N2920L-Dual-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Dual NPN |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 600 mA (max) |
| Power Dissipation (Ptot) | 1.2 W (max) |
| DC Current Gain (hFE) | 40 to 300 (depending on test conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature (TJ) | +200??C (max) |
| Package | Hermetic metal can (TO-18) |
JANS2N2920L-Dual-Transistor Key Features
- Dual NPN transistors in a single package enable compact circuit designs and matched pair performance, reducing board space and improving signal consistency.
- Military-grade JAN certification ensures strict quality and reliability for mission-critical applications under extreme environmental conditions.
- High voltage and current handling capability supports robust switching and amplification, suitable for demanding power management tasks.
- Excellent thermal stability extends device lifetime and maintains consistent electrical parameters over wide temperature ranges.
Typical Applications
- Signal amplification and switching in military and aerospace control systems where reliability and precision are essential.
- Analog circuit design requiring matched transistor pairs for differential amplifiers and current mirrors.
- Industrial automation equipment operating in harsh environments with wide temperature fluctuations.
- High-frequency switching circuits benefiting from the transistor??s 100 MHz transition frequency and low saturation voltage.
JANS2N2920L-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor stands out with its JAN military-grade qualification, ensuring higher reliability and ruggedness compared to commercial-grade devices. The integrated matched pair design improves signal accuracy and simplifies circuit layouts. Its higher voltage rating and robust thermal performance provide enhanced durability under stress, making it a preferred choice for engineers seeking dependable performance in critical industrial and defense applications.
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JANS2N2920L-Dual-Transistor Brand Info
The JANS2N2920L dual transistor is produced under the JANS series, which indicates compliance with the Joint Army-Navy standards for military-grade semiconductor devices. Manufactured by established semiconductor producers specializing in high-reliability components, this transistor is built to meet stringent requirements for aerospace, defense, and industrial markets. The metal can TO-18 package and rigorous testing protocols reflect the brand??s commitment to delivering consistent quality and long-term operational stability.
FAQ
What are the benefits of using a dual transistor like the JANS2N2920L in circuit design?
Using a dual transistor in one package simplifies circuit design by providing two closely matched transistors that share the same thermal environment. This improves performance in differential amplifier circuits and current mirror applications by reducing parameter variation and saving PCB space.
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How does the JAN qualification impact the reliability of this dual transistor?
JAN qualification ensures the transistor meets rigorous military standards for quality, reliability, and environmental tolerance. This includes extended temperature range operation, strict screening tests, and hermetic packaging, making the device suitable for harsh and mission-critical environments.
What are typical maximum operating conditions for this dual NPN transistor?
The device supports a collector-emitter voltage up to 80 V, collector current of 600 mA, and power dissipation up to 1.2 W







