JAN2N5683-Transistor NPN Power Amplifier Transistor in TO-220 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • Its voltage rating supports stable operation under typical power requirements, ensuring consistent performance.
  • The compact package type reduces board space, facilitating integration in tight hardware layouts.
  • Ideal for switching applications, it enhances circuit responsiveness and overall device efficiency.
  • Manufactured under stringent quality controls to maintain reliability and long-term operational stability.
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JAN2N5683-Transistor Overview

The JAN2N5683 is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to meet military standards, this transistor offers exceptional reliability and robust operation under demanding environmental conditions. Its optimized electrical characteristics provide efficient current handling and gain performance, making it suitable for industrial and defense electronics. Sourced from a reputable IC Manufacturer, the device ensures consistent quality and long-term stability, critical for mission-critical systems. Its complementary attributes enable seamless integration into analog circuits requiring dependable, high-speed switching and amplification.

JAN2N5683-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 80 V
Collector Current (IC) 5 A (maximum continuous)
Power Dissipation (PD) 30 W (maximum)
Gain Bandwidth Product (fT) 50 MHz (typical)
DC Current Gain (hFE) 40 to 160 (depending on operating point)
Transition Frequency Up to 60 MHz
Operating Temperature Range -55??C to +200??C
Package Type TO-39 Metal Can

JAN2N5683-Transistor Key Features

  • High Collector Current Capability: Supports up to 5A continuous current, enabling robust power handling in demanding circuits.
  • Wide Operating Temperature Range: Maintains reliable performance from -55??C to +200??C, ideal for harsh industrial and military environments.
  • Military-Grade Quality: Manufactured to stringent military standards, ensuring superior durability and consistency in critical applications.
  • High Gain Bandwidth Product: Offers efficient high-frequency operation up to 50 MHz, suitable for fast switching and amplification tasks.

Typical Applications

  • Power amplification stages in communication and radar systems where precise current handling and high gain are essential.
  • Industrial motor control circuits requiring reliable switching performance under elevated temperatures.
  • Military and aerospace electronics that demand components with proven ruggedness and long-term stability.
  • General-purpose amplification and switching in analog signal processing equipment.

JAN2N5683-Transistor Advantages vs Typical Alternatives

This transistor provides enhanced reliability and higher power dissipation compared to typical alternatives, making it ideal for applications needing sustained current and thermal endurance. Its military-grade construction ensures superior tolerance to temperature extremes and environmental stress, delivering consistent gain and switching speed. The device??s robust design reduces failure rates and maintenance, offering a dependable solution for engineers seeking quality and performance in demanding industrial and defense electronic designs.

JAN2N5683-Transistor Brand Info

The JAN2N5683 transistor is part of a series historically produced under military specifications, often associated with manufacturers specializing in high-reliability semiconductor devices. The JAN prefix denotes components manufactured to meet stringent Joint Army-Navy (JAN) standards, ensuring compliance with military-grade requirements for performance and durability. This transistor is typically offered by legacy semiconductor suppliers with deep expertise in producing discrete components for aerospace, defense, and industrial applications. Its packaging and testing conform to rigorous quality control processes, reflecting the trusted reputation of its manufacturing lineage.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (VCEO) for this device is 80 volts. This rating ensures the transistor can handle voltage stresses typical in power amplification and switching circuits without breakdown.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -55??C to +200??C, making it suitable for applications exposed to extreme temperature conditions such as military and industrial environments.

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