JANSD2N3634L-Transistor Overview
The JANSD2N3634L transistor is a high-voltage NPN bipolar junction transistor designed for reliable switching and amplification in industrial electronics. Featuring robust voltage and current handling capabilities, it supports a collector-emitter voltage rating of 100V and a collector current up to 4A, making it suitable for demanding power applications. Its complementary gain and switching speed optimize performance in power regulation, motor control, and signal amplification circuits. This transistor is engineered for stable operation under varying thermal conditions, enhancing its durability in industrial environments. For precision and reliability in high-power applications, this device offers a compelling solution from IC Manufacturer.
JANSD2N3634L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 4 A |
| Power Dissipation (Ptot) | 40 W |
| DC Current Gain (hFE) | 30 to 70 (at IC=1A) |
| Transition Frequency (fT) | 5 MHz |
| Operating Temperature Range | -65??C to +200??C |
JANSD2N3634L-Transistor Key Features
- High voltage tolerance: Supports up to 100V collector-emitter voltage, enabling use in high-power switching applications without breakdown risk.
- Robust collector current rating: Handles continuous collector currents of up to 4A, ensuring strong load-driving capability for motors and relays.
- Wide operating temperature range: Maintains performance from -65??C to +200??C, suitable for harsh industrial environments and elevated thermal conditions.
- Reliable DC current gain: Provides consistent gain values between 30 and 70, enhancing signal amplification accuracy and circuit stability.
Typical Applications
- Power switching and amplification in industrial motor control circuits, where high current and voltage handling are critical for reliable operation.
- Voltage regulation and power supply circuits that demand robust switching transistors capable of managing high power dissipation.
- Relay driving circuits requiring a transistor with sufficient gain and current capacity to drive large relay coils efficiently.
- Signal amplification in high-voltage analog circuits where linearity and gain stability are essential for accurate signal processing.
JANSD2N3634L-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling compared to standard NPN devices, providing enhanced reliability in high-power industrial applications. Its wide temperature range and dependable gain characteristics ensure consistent performance under thermal stress. Compared to typical alternatives, it delivers improved power dissipation capabilities and switching efficiency, making it an optimal choice for demanding environments requiring durable and precise transistor components.
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JANSD2N3634L-Transistor Brand Info
The JANSD2N3634L is a legacy device originating from reputable semiconductor manufacturers specializing in discrete bipolar transistors for industrial applications. Known for robust design and dependable operation, this transistor is often sourced from trusted suppliers who uphold strict quality standards. Its design aligns with military and industrial-grade specifications, ensuring high reliability. Engineers sourcing this transistor can expect consistent performance backed by established manufacturing processes common to leading IC manufacturers that cater to power switching and amplification needs.
FAQ
What is the maximum collector current rating for this transistor?
The transistor supports a maximum continuous collector current of 4 amperes, allowing it to drive moderate to high loads such as motors and relays effectively without compromising device integrity.
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Can this transistor operate at high temperatures reliably?
Yes, it is rated for operation between -65??C and +200??C, making it suitable for use in harsh industrial environments where temperature extremes are common.
What is the typical gain range of this transistor?
| Application | Automotive Electronics, Energy and Power, Industrial Automation |
|---|







