JANSM2N3636L-Transistor NPN Amplifier Transistor in TO-92 Package by JAN Semiconductor

  • This transistor controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • It offers stable electrical performance important for consistent device operation under varying conditions.
  • Its compact package design reduces board space, facilitating smaller and more integrated circuit layouts.
  • Ideal for switching applications in power management, enhancing device responsiveness and energy efficiency.
  • Manufactured to meet standard quality criteria, ensuring dependable operation over an extended lifespan.
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JANSM2N3636L-Transistor Overview

The JANSM2N3636L transistor is a robust NPN bipolar junction transistor designed for medium power amplification and switching applications. Featuring a high collector current capacity and reliable voltage ratings, this device delivers consistent performance in industrial and consumer electronics. Its complementary balance of gain and power dissipation makes it suitable for a wide range of analog and digital circuits. Engineers and sourcing specialists will appreciate the transistor??s proven durability and stable operation under varying load conditions. For detailed sourcing and technical support, visit IC Manufacturer.

JANSM2N3636L-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 3 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40 to 320 (varies by operating point)
Transition Frequency (fT) 70 MHz (typical)
Package Type TO-126

JANSM2N3636L-Transistor Key Features

  • High Collector Current Capacity: Supports up to 3 A, enabling reliable switching and amplification for medium power circuits.
  • Wide Voltage Ratings: With a collector-emitter voltage of 60 V, it handles moderately high voltages suitable for industrial electronics.
  • Robust Power Dissipation: Rated for 30 W power dissipation, which ensures stable thermal performance during continuous operation.
  • Good Current Gain Range: Offers a flexible DC current gain between 40 and 320, allowing adaptation across different amplification requirements.

Typical Applications

  • Medium power audio amplifiers where robust current handling and linearity are essential.
  • Switching regulators and power control circuits requiring efficient transistor switching at moderate voltages.
  • Driver stages in relay and motor control circuits benefiting from its high current and power rating.
  • General-purpose amplification in consumer and industrial electronics due to its reliable performance and package type.

JANSM2N3636L-Transistor Advantages vs Typical Alternatives

This transistor offers a strong balance of voltage, current capacity, and power dissipation that surpasses many comparable devices. Its high collector current rating of 3 A and power dissipation capability up to 30 W provide enhanced reliability under load. The device??s wide current gain range improves circuit flexibility, making it a preferred choice for engineers seeking consistent, efficient switching and amplification in industrial-grade applications.

JANSM2N3636L-Transistor Brand Info

The JANSM2N3636L is a military or industrial-grade transistor variant commonly associated with legacy manufacturers supplying high-reliability components for demanding environments. This transistor is manufactured to comply with stringent quality standards, ensuring long-term stability and performance in critical applications. Its TO-126 package is widely recognized for ease of integration into standard circuit boards. Buyers sourcing this transistor benefit from a well-documented part with established supply chains and technical support via trusted semiconductor distributors.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current is rated at 3 amperes, which allows the transistor to handle moderate power loads typical in switching and amplification circuits.

Can this transistor be used in high-frequency applications?

With a transition frequency around 70 MHz, this transistor is suitable for moderate frequency applications, including audio and switching circuits, but may not be ideal for very high-frequency RF designs.

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