The MSR2N2369AUB is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust maximum collector current and voltage rating, it delivers reliable operation in demanding industrial circuits. This transistor offers a balance of gain, switching speed, and power dissipation suitable for signal processing and low power control tasks. Its compact surface-mount package facilitates efficient PCB layout and thermal management. Engineers and sourcing specialists will find this device an optimal choice for cost-effective, durable transistor solutions. For further details and procurement, visit IC Manufacturer.
MSR2N2369AUB-Transistor Technical Specifications
Parameter
Value
Unit
Collector-Emitter Voltage (VCEO)
40
V
Collector-Base Voltage (VCBO)
60
V
Emitter-Base Voltage (VEBO)
5
V
Collector Current (IC) – Continuous
0.8
A
Power Dissipation (Ptot)
0.625
W
DC Current Gain (hFE)
100 – 300
(typical)
Transition Frequency (fT)
100
MHz
Package Type
SOT-23
Surface Mount
MSR2N2369AUB-Transistor Key Features
High collector current rating: Supports up to 0.8A continuous current, enabling efficient power management in switching circuits.
Wide voltage handling capability: Collector-emitter voltage of 40V ensures reliable operation in moderate voltage applications.
Fast switching speed: Transition frequency of 100MHz allows for high-frequency signal amplification and switching tasks.
Consistent DC gain range: Offers hFE between 100 and 300 for stable amplification performance.
Low power dissipation: Supports up to 0.625W, balancing performance and thermal reliability.
Typical Applications
Signal amplification in communication devices requiring moderate power and high-frequency response, such as RF front-end stages and audio pre-amplifiers.
Low to medium power switching circuits in industrial control systems.
Driver stage for relays, LEDs, and other discrete components in automation and instrumentation equipment.
General-purpose amplification and switching in battery-powered portable devices where space and power efficiency are critical.
MSR2N2369AUB-Transistor Advantages vs Typical Alternatives
The MSR2N2369AUB transistor provides a superior balance of voltage and current handling in a compact SOT-23 package compared to many standard transistors. Its fast transition frequency and consistent current gain range support precise high-frequency switching and amplification, offering enhanced circuit responsiveness. Additionally, its low power dissipation improves thermal performance, making it a reliable, efficient choice over bulkier or lower-spec alternatives in industrial and consumer electronics.
The MSR2N2369AUB is produced by a reputable semiconductor manufacturer known for quality discrete components tailored for industrial applications. This transistor aligns with the company??s commitment to providing reliable, high-performance devices optimized for surface-mount technology. The brand emphasizes rigorous quality control and compatibility with automated assembly processes, ensuring consistent product performance and availability for engineers and sourcing specialists worldwide.
