JANTX2N5151U3-Transistor Overview
The JANTX2N5151U3 is a high-reliability NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and performance standards. This transistor offers robust switching and amplification capabilities at moderate power levels, making it suitable for demanding environments. Featuring a TO-39 metal can package, it ensures excellent thermal management and mechanical durability. With a collector-emitter voltage rating up to 100 V and a collector current of 1.5 A, it balances performance and ruggedness effectively. Engineers and sourcing specialists will find this transistor ideal for mission-critical systems where reliability and consistency are paramount. For more detailed product insights, visit IC Manufacturer.
JANTX2N5151U3-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector Current (Ic) | 1.5 A |
| Power Dissipation (Pc) | 1.5 W (at 25??C) |
| Gain Bandwidth Product (fT) | 70 MHz (typical) |
| DC Current Gain (hFE) | 40 to 160 (depending on Ic) |
| Junction Temperature (Tj) | +200??C Maximum |
| Package Type | TO-39 Metal Can |
JANTX2N5151U3-Transistor Key Features
- High Voltage Handling: Supports up to 100 V collector-emitter voltage, enabling use in high-voltage switching circuits with enhanced safety margins.
- Robust Collector Current Capability: Capable of 1.5 A collector current, suitable for moderate power amplification and switching applications.
- Wide Operating Temperature Range: Rated for junction temperatures up to +200??C, ensuring reliable operation in harsh thermal environments typical in aerospace systems.
- TO-39 Metal Can Package: Provides superior mechanical strength and thermal dissipation compared to plastic packages, increasing device longevity under stress.
Typical Applications
- Military and aerospace electronic systems requiring high-reliability transistors for analog amplification and switching in control circuits, radar, and communication equipment.
- Power switching in rugged industrial environments where temperature extremes and mechanical stress are common.
- Signal amplification stages in avionics and instrumentation systems with strict performance and reliability criteria.
- Test and measurement devices that demand stable transistor parameters for consistent operation over extended periods.
JANTX2N5151U3-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling combined with a high maximum junction temperature, which provides enhanced robustness in extreme environments compared to typical commercial transistors. The metal can TO-39 package improves thermal dissipation and mechanical durability, increasing reliability under vibration and temperature stress. Its military-grade manufacturing and screening processes ensure consistent performance and long-term stability, making it a preferred choice for critical aerospace and defense applications.
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JANTX2N5151U3-Transistor Brand Info
The JANTX2N5151U3 is a military-grade transistor originally standardized under the Joint Army-Navy (JAN) specification. It is produced by several semiconductor manufacturers specializing in defense and aerospace components, adhering to strict MIL-STD-750 testing and qualification protocols. The “JANTX” prefix indicates a transistor qualified for extended temperature ranges and enhanced electrical parameters. This device is recognized for its reliability in high-stress applications and is a well-established solution for engineers seeking rugged transistors with proven heritage in mission-critical electronic systems.
FAQ
What is the maximum voltage rating for the JANTX2N5151U3 transistor?
The maximum collector-emitter voltage (Vceo) rating is 100 V. This allows the transistor to operate safely in circuits that require high-voltage switching or amplification without risking breakdown.
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Can this transistor handle high power dissipation?
Yes,







