JAN2N5671-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

  • Operates as a transistor to amplify or switch electronic signals, enabling efficient circuit control.
  • Features a key electrical parameter that ensures stable performance under varying load conditions.
  • Designed with a compact package, offering board-space savings for dense electronic assemblies.
  • Ideal for use in power regulation circuits, improving energy management in industrial or consumer devices.
  • Manufactured following quality standards to provide consistent reliability and long-term operational stability.
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JAN2N5671-Transistor Overview

The JAN2N5671 transistor is a high-performance NPN silicon transistor designed for use in medium-power amplification and switching applications. Featuring robust voltage and current ratings, it ensures reliable operation in demanding industrial environments. This transistor is manufactured to meet military standards, providing exceptional durability and consistency. With a maximum collector current of 1.5A and a collector-emitter voltage rating of 100V, it supports efficient signal amplification and switching tasks. The device is housed in a TO-18 metal can package, offering enhanced thermal dissipation and mechanical strength. For detailed sourcing and technical guidance, visit IC Manufacturer.

JAN2N5671-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 Volts
Collector-Base Voltage (VCBO) 120 Volts
Emitter-Base Voltage (VEBO) 5 Volts
Collector Current (IC) 1.5 Amps
Power Dissipation (Ptot) 1.0 Watts
Transition Frequency (fT) 40 MHz
DC Current Gain (hFE) 40 to 160 Unitless
Package Type TO-18

JAN2N5671-Transistor Key Features

  • High voltage tolerance: Supports up to 100V collector-emitter voltage enabling use in medium power circuits with demanding voltage requirements.
  • Robust collector current capacity: Handles continuous collector currents up to 1.5A, suitable for efficient switching and amplification.
  • Wide DC current gain range: Offers a gain from 40 to 160, allowing flexible application in signal amplification with predictable performance.
  • Military-grade reliability: Built to JAN (Joint Army-Navy) standards ensuring ruggedness for defense and aerospace sectors.
  • Metal TO-18 package: Provides excellent thermal conductivity and mechanical protection, enhancing device longevity under thermal stress.
  • Moderate transition frequency: 40 MHz frequency response supports moderately high-speed switching applications.

Typical Applications

  • Medium power linear amplifiers in communication and control systems, where consistent gain and voltage handling are critical for signal integrity.
  • Switching regulators and power management circuits that require reliable transistor operation under moderate power loads.
  • Industrial control systems for driving relays or solenoids, benefiting from the robust collector current and voltage ratings.
  • Military and aerospace electronics demanding high-reliability discrete transistor components compliant with defense standards.

JAN2N5671-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of voltage handling and collector current capacity compared to standard transistors in similar power classes. Its military-grade construction ensures enhanced reliability and consistency, crucial for mission-critical applications. The TO-18 metal package improves thermal management, reducing failure rates under high power dissipation conditions. Overall, this device provides a dependable, high-performance solution for amplification and switching tasks where robustness and stability are essential.

JAN2N5671-Transistor Brand Info

The JAN2N5671 transistor is a legacy device originally standardized by the U.S. military under the Joint Army-Navy (JAN) designation system, which specifies stringent quality and reliability requirements. It is commonly manufactured by multiple semiconductor companies that produce military-grade components, ensuring compatibility and interchangeability. This transistor??s design and testing comply with MIL-STD-883 standards, guaranteeing performance in harsh environmental conditions. The

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