JANSR2N2907AUA-Transistor Overview
The JANSR2N2907AUA transistor is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features robust electrical characteristics suitable for industrial and commercial electronic circuits, providing reliable operation in demanding environments. With its complementary NPN counterpart, this transistor supports versatile circuit design, offering stable gain and efficient switching behavior. Ideal for engineers and sourcing specialists seeking a dependable component, this transistor delivers consistent performance in low to moderate power applications. For more detailed product sourcing and technical support, visit IC Manufacturer.
JANSR2N2907AUA-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 600 mA |
| Power Dissipation (Ptot) | 625 mW |
| Transition Frequency (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 to 300 (varies with operating point) |
| Collector-Base Voltage (VCBO) | 60 V |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | TO-18 Metal Can |
JANSR2N2907AUA-Transistor Key Features
- High Voltage Capability: Supports collector-emitter voltages up to 60 V, enabling use in a wide range of switching and amplification circuits.
- Moderate Current Handling: Handles collector currents up to 600 mA, suitable for medium power applications without complex cooling requirements.
- High Gain Performance: Provides a DC current gain ranging from 100 to 300, ensuring efficient signal amplification with minimal distortion.
- Wide Operating Temperature Range: Reliable performance from -55??C to +150??C suits harsh industrial environments and temperature-sensitive systems.
Typical Applications
- Switching and amplification in analog signal processing circuits, commonly found in industrial control systems and instrumentation requiring stable transistor operation.
- Driver stages in relay and solenoid control circuits, benefiting from the transistor??s ability to manage moderate current loads efficiently.
- Complementary transistor pairs in audio amplifiers or power management boards, providing balanced performance alongside NPN counterparts.
- General-purpose switching applications in consumer electronics and automation systems, where reliable and consistent transistor switching is essential.
JANSR2N2907AUA-Transistor Advantages vs Typical Alternatives
This transistor offers a robust balance of voltage and current ratings, making it superior in moderate power applications compared to typical alternatives with lower voltage or current limits. Its high DC gain enhances circuit sensitivity and efficiency, reducing power losses. The wide operating temperature range ensures reliability in industrial environments, while the TO-18 metal can package provides excellent thermal performance and durability over plastic counterparts.
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JANSR2N2907AUA-Transistor Brand Info
The JANSR2N2907AUA is a military-grade transistor variant of the popular 2N2907 series, historically manufactured by several semiconductor vendors with a focus on high-reliability applications. The ??JAN?? prefix indicates compliance with Joint Army-Navy standards, ensuring stringent quality and performance requirements for defense and aerospace use. This transistor is typically sourced from suppliers specializing in ruggedized components, guaranteeing traceability, extensive testing, and long-term availability for critical industrial and military systems.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current for this device is 600 mA. This allows it to handle moderate power loads typical in switching and amplification circuits without requiring additional heat sinking in many applications.
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Can this transistor operate at high frequencies?
Yes, it supports a transition frequency (fT) of approximately 100 MHz, making it suitable for high-frequency switching and signal amplification in RF and analog circuits within its power and voltage limits.






