JANS2N4029-Transistor NPN Bipolar Junction Transistor in TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Designed with a specific voltage rating to ensure stable operation under varying electrical loads.
  • The package offers a compact footprint, allowing for space-saving on densely populated circuit boards.
  • Ideal for use in signal amplification within communication devices, improving overall system performance.
  • Manufactured to meet stringent reliability standards, ensuring consistent performance over time.
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JANS2N4029-Transistor Overview

The JANS2N4029 is a high-performance NPN bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and military-grade applications. Featuring robust voltage and current ratings, this transistor supports medium power handling with a collector-emitter voltage of 100 V and a collector current up to 1 A. Its rugged construction ensures dependable operation in harsh environments, making it well-suited for aerospace, defense, and industrial control circuits. Ideal for engineers and sourcing specialists seeking a stable and durable transistor component, the JANS2N4029 delivers consistent gain and switching characteristics. For more detailed information, visit IC Manufacturer.

JANS2N4029-Transistor Technical Specifications

Parameter Value Units
Transistor Type NPN Bipolar Junction ?C
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Power Dissipation (PD) 1.2 W
DC Current Gain (hFE) 40 to 160 ?C
Transition Frequency (fT) 30 MHz
Package Type TO-18 Metal Can ?C

JANS2N4029-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage rating of 100 V, the device ensures reliable operation under elevated voltage conditions typical in industrial circuits.
  • Moderate current capacity: Supports collector currents up to 1 A, allowing effective switching and amplification in medium power applications.
  • Wide DC gain range: Provides a gain (hFE) between 40 and 160, offering flexibility for various circuit designs requiring different amplification levels.
  • Robust TO-18 metal can package: Enhances thermal dissipation and mechanical durability, critical for long-term reliability in demanding environments.
  • High transition frequency: A transition frequency of 30 MHz supports moderate-speed switching suitable for many control and signal processing applications.

Typical Applications

  • Industrial control systems: Utilized in relay drivers, signal amplifiers, and switching circuits where medium voltage and current handling are required for robust operation.
  • Military and aerospace electronics: Its rugged construction and stable electrical characteristics suit high-reliability environments and harsh conditions.
  • Power management circuits: Functions effectively in voltage regulation and power switching scenarios requiring dependable transistor performance.
  • Signal amplification: Ideal for amplification stages in analog circuits, including audio and instrumentation amplifiers, due to its consistent gain and frequency response.

JANS2N4029-Transistor Advantages vs Typical Alternatives

This transistor stands out with its combination of high voltage handling and moderate current capacity, providing reliable switching and amplification. Its robust metal can package offers superior thermal performance and mechanical strength compared to plastic-encapsulated alternatives. The broad gain range and decent transition frequency improve design flexibility, making it a practical choice in industrial and military-grade applications where durability and consistent electrical characteristics are critical.

JANS2N4029-Transistor Brand Info

The JANS prefix designates this transistor as a military specification (MIL-SPEC) variant of the standard 2N4029 transistor, often manufactured by established semiconductor companies adhering to stringent quality and reliability standards. These devices are typically screened and qualified for aerospace, defense, and industrial applications requiring enhanced environmental and electrical robustness. The metal can TO-18 package and controlled gain parameters reflect the product??s compliance with rigorous performance criteria to meet demanding operating conditions.

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