JANTX2N3999-Transistor NPN Power Amplifier in TO-3 Package by ON Semiconductor

  • Switches and amplifies electrical signals, enabling efficient control in electronic circuits.
  • Features high voltage tolerance, ensuring stable performance in demanding environments.
  • Compact package design reduces board space, facilitating integration into tight layouts.
  • Ideal for power regulation tasks, helping maintain consistent voltage levels in devices.
  • Manufactured to meet strict reliability standards, supporting long-term operational stability.
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JANTX2N3999-Transistor Overview

The JANTX2N3999 is a high-voltage, high-power NPN bipolar junction transistor designed for robust industrial and military applications requiring reliable switching and amplification. Featuring a collector-emitter voltage rating of 250 V and a collector current of up to 10 A, it supports demanding power management and amplification tasks with durability under harsh conditions. Its complementary design and rugged construction ensure consistent performance in amplifier circuits, switching regulators, and motor control systems. This transistor aligns well with requirements for military-standard components, ensuring long-term reliability and thermal stability. For detailed sourcing and product support, visit IC Manufacturer.

JANTX2N3999-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)250 V
Collector-Base Voltage (VCBO)300 V
Emitter-Base Voltage (VEBO)7 V
Collector Current (IC)10 A (continuous)
Power Dissipation (PD)125 W
Gain Bandwidth Product (fT)15 MHz (typical)
DC Current Gain (hFE)20 to 70
Junction Temperature (Tj)+200??C max

JANTX2N3999-Transistor Key Features

  • High Voltage and Current Handling: Supports up to 250 V and 10 A, enabling powerful switching and amplification in demanding circuits.
  • Military-Grade Reliability: Designed to meet stringent military standards, assuring consistent performance in harsh environments.
  • Thermal Stability: Capable of operating at junction temperatures up to 200??C, reducing thermal stress in high-power applications.
  • Wide Gain Range: Provides a DC current gain from 20 to 70, supporting flexible circuit design with efficient signal amplification.

Typical Applications

  • High power audio amplifiers requiring reliable, high-voltage transistors for sound fidelity and signal integrity.
  • Switching regulators and power supplies in industrial control systems, delivering stable voltage conversion under heavy loads.
  • Motor control circuits where robust switching performance is critical for efficient speed and torque management.
  • Military and aerospace electronic systems that demand rugged components capable of withstanding extreme environmental conditions.

JANTX2N3999-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to typical alternatives, making it ideal for high-power industrial and military applications. Its military-grade construction ensures enhanced reliability and thermal performance, reducing failure rates in critical systems. The wide gain range improves design flexibility, while its robust power dissipation capability supports demanding load conditions without compromising longevity.

JANTX2N3999-Transistor Brand Info

The JANTX2N3999 is a military-standard transistor originally developed and produced under strict quality controls to meet defense and aerospace industry requirements. It is commonly supplied by authorized manufacturers specializing in rugged semiconductor components, ensuring traceability and compliance with MIL-STD certifications. This transistor has established itself as a dependable choice where high voltage, current, and environmental resilience are mandatory, reflecting the brand??s commitment to high-reliability electronic devices.

FAQ

What is the maximum collector current rating of the JANTX2N3999 transistor?

The transistor supports a continuous collector current of up to 10 amperes, making it suitable for high-power switching and amplification applications where substantial current flow is required.

Can this transistor operate at high temperatures?

Yes, the device is rated for a maximum junction temperature of 200

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