JANS2N2919L-Dual-Transistor Overview
The JANS2N2919L-Dual-Transistor is a rugged, high-performance NPN bipolar junction transistor configured as a matched pair in a single package. Designed for military and aerospace applications, it offers enhanced reliability and consistent electrical characteristics under demanding conditions. This transistor device supports amplification and switching tasks with a collector current rating up to 800mA and voltage ratings suitable for mid-power applications. The integrated dual transistor design simplifies circuit layouts and improves matching accuracy, reducing component count and enhancing system stability. For proven quality and robust semiconductor components, visit IC Manufacturer.
JANS2N2919L-Dual-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Dual Transistor | – |
| Collector-Emitter Voltage (V_CEO) | 40 | V |
| Collector-Base Voltage (V_CBO) | 60 | V |
| Emitter-Base Voltage (V_EBO) | 5 | V |
| Collector Current (I_C) | 800 | mA |
| Power Dissipation (P_D) | 625 | mW |
| DC Current Gain (h_FE) | 40 to 300 | – |
| Transition Frequency (f_T) | 100 | MHz |
| Package Type | TO-18 Metal Can | – |
JANS2N2919L-Dual-Transistor Key Features
- Matched Dual Transistor Configuration: Provides excellent device-to-device matching, which is critical for differential amplifier and current mirror circuits, ensuring consistent performance.
- High Collector Current Capability: Supports up to 800mA, enabling use in moderate power amplification and switching roles without compromising reliability.
- Wide Voltage Ratings: Collector-emitter voltage up to 40V and collector-base voltage up to 60V allow robust operation in various industrial and aerospace environments.
- High Transition Frequency (100 MHz): Supports high-speed switching and amplification in analog and RF circuits.
- Durable TO-18 Metal Can Package: Enhances thermal dissipation and mechanical stability, suitable for harsh operating conditions.
- Military-Grade Reliability: Manufactured to meet JAN (Joint Army-Navy) standards for quality and durability in mission-critical applications.
- Wide DC Current Gain Range: Flexibility in design with gain values between 40 and 300 caters to various amplification needs.
Typical Applications
- Low to medium power amplification in analog signal processing circuits, especially where component matching improves linearity and reduces distortion.
- Current mirror and differential amplifier circuits in precision analog designs requiring matched transistor pairs.
- Switching applications in control and logic circuits where reliable transistor pairs simplify design and improve efficiency.
- Aerospace and military electronic systems demanding rugged, high-reliability transistor solutions under extreme environmental conditions.
JANS2N2919L-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor offers superior device matching and military-grade reliability compared to standard single-transistor alternatives. Its matched pair configuration reduces circuit complexity and improves accuracy in analog applications. The metal can package ensures better thermal management and durability, making it well-suited for harsh environments. Furthermore, its broad voltage and current ratings provide flexibility, outperforming many general-purpose transistors in power handling and frequency response.
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JANS2N2919L-Dual-Transistor Brand Info
The JANS2N2919L is a military specification (JAN) variant of the 2N2919 transistor, produced under stringent quality controls to meet defense
