JANTXV2N6341-Transistor NPN High-Speed Switching Transistor in TO-92 Package

  • This transistor controls current flow efficiently, enabling precise signal amplification in circuits.
  • It supports high voltage operation, ensuring safe performance under demanding electrical conditions.
  • The compact package reduces board space, ideal for applications with strict size constraints.
  • Commonly used in switching applications, it improves energy efficiency and response times.
  • Manufactured to meet strict reliability standards, ensuring consistent operation over time.
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JANTXV2N6341-Transistor Overview

The JANTXV2N6341 is a high-reliability NPN bipolar junction transistor (BJT) designed for applications requiring robust switching and amplification under demanding conditions. It features a collector-emitter voltage rating of 80 V and a collector current capacity of 10 A, making it suitable for medium-power industrial and military-grade systems. Produced to JAN (Joint Army-Navy) military standards, this transistor offers enhanced durability, thermal stability, and consistent electrical performance. Its hermetically sealed metal can package ensures protection against environmental stress, making it a preferred choice for aerospace, defense, and high-reliability industrial electronics. For detailed sourcing and specifications, visit IC Manufacturer.

JANTXV2N6341-Transistor Technical Specifications

Parameter Specification Unit
Type NPN Bipolar Junction Transistor ?C
Collector-Emitter Voltage (VCEO) 80 Volts
Collector-Base Voltage (VCBO) 100 Volts
Emitter-Base Voltage (VEBO) 5 Volts
Collector Current (IC) 10 Amperes
Power Dissipation (PD) 40 Watts
Gain Bandwidth Product (fT) 8 MHz
DC Current Gain (hFE) 30 to 80 ?C
Operating Temperature Range -65 to +200 ??C
Package Hermetically Sealed Metal Can (TO-39) ?C

JANTXV2N6341-Transistor Key Features

  • High collector current capability: Supports up to 10 A, enabling efficient switching and power handling in demanding circuits.
  • Military-grade reliability: Manufactured to JAN standards, providing superior ruggedness and long-term performance in harsh environments.
  • Wide operating temperature range: Functions reliably from -65??C to +200??C, suitable for extreme industrial and aerospace applications.
  • Hermetically sealed metal can package: Protects against contamination and mechanical stress, ensuring stable electrical characteristics over time.

Typical Applications

  • Power amplification stages in military and aerospace communication systems requiring reliable medium-power performance and ruggedness.
  • Switching elements in industrial control circuits where high current and voltage handling are critical.
  • High-reliability embedded systems in harsh environments, including aerospace instrumentation and defense electronics.
  • General-purpose medium-power transistor applications where consistent gain and thermal stability are necessary.

JANTXV2N6341-Transistor Advantages vs Typical Alternatives

This transistor stands out with its military-grade construction and hermetic sealing, providing superior durability compared to commercial-grade alternatives. Its high collector current and voltage ratings deliver robust power handling, while the wide operating temperature range ensures stable operation under extreme conditions. These factors contribute to enhanced reliability, accuracy, and efficiency in mission-critical and industrial applications, making it a dependable choice for engineers seeking long-term performance and ruggedness.

JANTXV2N6341-Transistor Brand Info

The JANTXV2N6341 is produced under stringent military standards (JAN) by manufacturers specializing in high-reliability semiconductor components for defense and aerospace sectors. These manufacturers adhere to rigorous testing and quality control processes to ensure compliance with MIL-STD specifications. The metal can TO-39

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