JANTXV2N6649-Darlington Transistor, High Gain, TO-220 Package ?C On Semiconductor

  • This device functions as a Darlington transistor, providing high current gain for efficient signal amplification.
  • Its voltage rating supports robust operation in circuits requiring reliable switching performance.
  • The compact package design enables easy integration into space-constrained printed circuit boards.
  • Ideal for motor control applications, it enhances response and precision in driving loads.
  • Manufactured to meet industry standards, ensuring consistent performance and operational stability.
Microchip Technology-logo
产品上方询盘

JANTXV2N6649-Darlington Overview

The JANTXV2N6649-Darlington is a high-voltage NPN Darlington transistor designed for robust switching and amplification applications. Rated for a collector-emitter voltage (VCEO) of 120V and a collector current (IC) up to 8A, it enables efficient control of medium-power loads. This transistor’s high gain and rugged construction make it suitable for industrial environments requiring reliable performance and extended operating life. Its complementary electrical characteristics support a wide range of power switching and amplification tasks. Available through IC Manufacturer, this device is engineered for demanding applications in automotive, industrial controls, and power management systems.

JANTXV2N6649-Darlington Technical Specifications

ParameterSpecificationUnit
Collector-Emitter Voltage (VCEO)120V
Collector-Base Voltage (VCBO)120V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC) – Continuous8A
Power Dissipation (Ptot)75W
Gain Bandwidth Product (fT)?? 50MHz
DC Current Gain (hFE)Minimum 1000??
Operating Junction Temperature (TJ)-65 to +200??C
Storage Temperature Range (TSTG)-65 to +200??C

JANTXV2N6649-Darlington Key Features

  • High voltage rating: With a collector-emitter voltage of 120V, it supports demanding power switching operations without compromising device integrity.
  • Elevated current handling: The transistor can continuously handle up to 8A, allowing effective control of medium to high power loads in industrial applications.
  • High DC current gain: A minimum gain of 1000 ensures excellent amplification, reducing the base drive current requirements and improving overall circuit efficiency.
  • Wide operating temperature range: Rated from -65??C to +200??C, this device maintains performance in harsh thermal environments typical of automotive and industrial settings.
  • Robust power dissipation: With a maximum total power dissipation of 75W, the transistor can sustain high power loads while minimizing thermal stress.
  • Darlington configuration: This integrated dual-transistor setup enhances input impedance and switching speed, benefiting high-sensitivity control circuits.
  • Reliable packaging: Designed in a robust TO-3 metal can package, it offers excellent heat dissipation and mechanical durability for industrial-grade reliability.

Typical Applications

  • Industrial motor control circuits requiring high gain and high voltage switching capabilities for controlling medium power motors and actuators.
  • Power amplifiers in audio and signal processing equipment where linear amplification with high gain is essential.
  • Relay drivers and solenoid controllers in automated machinery that demand reliable switching at medium to high current levels.
  • Automotive electronic systems for load switching and control modules operating under varying temperature conditions.

JANTXV2N6649-Darlington Advantages vs Typical Alternatives

This device offers enhanced voltage and current handling compared to standard transistors, delivering high gain and robust power dissipation in a compact package. Its Darlington configuration improves switching efficiency and reduces base drive requirements, allowing more

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?