JANTXV2N5794-Dual-Transistor by ON Semiconductor – High-Speed Switching, TO-220 Package

  • This dual transistor provides efficient switching and amplification, enhancing circuit performance and control.
  • A high voltage rating ensures stable operation in demanding electronic environments, improving device longevity.
  • The compact package type supports board space savings, facilitating integration into dense circuit layouts.
  • Ideal for signal processing in communication devices, it enables precise current regulation and signal integrity.
  • Manufactured under strict quality controls, it delivers consistent performance and dependable reliability over time.
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JANTXV2N5794-Dual-Transistor Overview

The JANTXV2N5794-Dual-Transistor is a high-reliability, matched pair NPN transistor device designed for critical amplification and switching applications. Housed in a hermetically sealed TO-5 metal can, it offers superior environmental protection and long-term stability. This dual transistor configuration enables precise gain matching, reducing drift and enhancing circuit accuracy. With a collector-emitter voltage rating suited for a variety of industrial and military applications, it is ideal for use in low-noise, linear amplifier stages and differential amplifier circuits. Available through IC Manufacturer, this component ensures dependable performance in demanding environments where device consistency is paramount.

JANTXV2N5794-Dual-Transistor Technical Specifications

Parameter Specification Unit
Transistor Type NPN, Dual Matched Pair
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 200 mA
Power Dissipation (Ptot) 1.0 W
DC Current Gain (hFE) 70 to 270 (typical)
Transition Frequency (fT) 100 MHz
Package Hermetically Sealed TO-5 Metal Can

JANTXV2N5794-Dual-Transistor Key Features

  • Matched Dual Transistor Pair: Ensures closely matched gain and characteristics for precision differential amplifier designs, improving signal integrity and reducing offset errors.
  • Hermetically Sealed TO-5 Package: Provides enhanced protection against moisture, dust, and contaminants, promoting long-term reliability in harsh environments.
  • High Voltage and Current Ratings: Supports collector-emitter voltages up to 80 V and collector currents up to 200 mA, enabling robust operation in industrial and military circuits.
  • Wide Gain Range: DC current gain ranging from 70 to 270 allows flexible biasing and design optimization across various analog applications.

Typical Applications

  • Low-noise amplifier stages requiring matched transistor pairs for minimal distortion and improved linearity in instrumentation and communication systems.
  • Differential amplifiers and comparator circuits where precision gain matching is critical to performance.
  • Switching circuits in military and aerospace systems benefiting from hermetic sealing and enhanced reliability.
  • Signal conditioning modules in industrial automation where environmental protection and electrical stability are essential.

JANTXV2N5794-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers superior gain matching and hermetic sealing compared to standard discrete transistors, ensuring enhanced accuracy and long-term stability in sensitive analog circuits. Its high voltage and current ratings enable operation in more demanding applications without sacrificing reliability. The TO-5 metal can package provides environmental resilience that typical plastic-encapsulated alternatives lack, making it ideal for critical industrial and military uses.

JANTXV2N5794-Dual-Transistor Brand Info

The JANTXV2N5794-Dual-Transistor is a JAN (Joint Army-Navy) certified device, manufactured to meet stringent military standards for reliability and performance. JAN transistors are known for their rigorous screening and hermetic sealing processes, ensuring dependable operation under extreme conditions. This product is part of an established line of precision bipolar junction transistors widely

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