JANKCB2N5415 Transistor Die – High-Power Amplification Semiconductor Chip (Die Package)

  • This transistor die enables efficient signal amplification, enhancing circuit performance and responsiveness.
  • Its electrical characteristics ensure stable operation under varying load conditions, critical for reliable device function.
  • The compact die form factor supports dense circuit layouts, optimizing board space without compromising connectivity.
  • Ideal for integration in custom electronics, it simplifies prototyping and tailored circuit designs with precise control.
  • Manufactured under strict quality controls, this component offers consistent performance and long-term operational stability.
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JANKCB2N5415-Transistor-Die Overview

The JANKCB2N5415 transistor die is a high-performance semiconductor component designed for precision amplification and switching applications. Engineered to deliver reliable operation under varying electrical conditions, it features robust current handling and voltage ratings essential for industrial and consumer electronics. Its compact die form enables seamless integration into custom assemblies, making it ideal for engineers focused on optimizing circuit performance and miniaturization. Manufactured with stringent quality controls, this transistor die promises consistent functionality, catering to sourcing specialists and design engineers seeking dependable semiconductor solutions. For more detailed insights, visit IC Manufacturer.

JANKCB2N5415-Transistor-Die Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO)100 V
Collector Current (IC)6 A (maximum continuous)
Power Dissipation (Ptot)75 W
DC Current Gain (hFE)40 to 160 (varies by operating point)
Transition Frequency (fT)3 MHz (typical)
Junction Temperature (Tj)150 ??C (maximum)
Package TypeDie form (bare semiconductor die)

JANKCB2N5415-Transistor-Die Key Features

  • High voltage capability: Supports up to 100 V collector-emitter voltage, enabling use in high-voltage switching and amplification circuits.
  • Robust current handling: Can continuously handle collector currents up to 6 A, ensuring suitability for power applications.
  • Wide gain range: Offers DC current gain between 40 and 160, supporting flexibility in design for amplification requirements.
  • Compact bare die format: Facilitates custom packaging and integration into hybrid circuits, allowing for optimized thermal management and space savings.

Typical Applications

  • Power amplification in industrial control systems where reliability and high current capability are essential.
  • Switching elements in power supply regulation and motor driver circuits requiring efficient high-voltage handling.
  • Signal amplification stages in audio and instrumentation circuits demanding stable gain performance.
  • Custom semiconductor assemblies where bare die integration is preferred for thermal or size constraints.

JANKCB2N5415-Transistor-Die Advantages vs Typical Alternatives

This transistor die stands out by combining a high voltage rating with substantial continuous current capacity, providing enhanced power handling compared to typical small-signal alternatives. Its bare die packaging allows designers to achieve superior thermal dissipation and minimize parasitic effects, improving overall circuit efficiency and reliability. The wide DC gain range also allows for versatile application across switching and amplification tasks, making it a robust choice for engineers seeking tailored semiconductor solutions.

JANKCB2N5415-Transistor-Die Brand Info

The JANKCB2N5415 transistor die is produced by a reputable semiconductor manufacturer specializing in discrete transistor devices. Known for delivering consistent quality and performance, the brand supports industrial electronics markets with a wide range of power transistors and custom semiconductor components. This particular transistor die reflects the company’s commitment to providing bare die solutions optimized for integration flexibility and high electrical stress tolerance, catering to advanced engineering and sourcing needs.

FAQ

What is the main advantage of using a bare transistor die like this one?

Using a bare transistor die allows for more precise thermal management and reduced parasitic inductance and capacitance compared to packaged transistors. This flexibility is crucial in high-performance circuits where space and heat dissipation are critical design factors.

Can this transistor die handle continuous high current loads?

Yes, it is rated for continuous collector currents up to 6 A, making it suitable for power amplification and switching applications requiring sustained high current without performance degradation.

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